N通道HiPerFET

• 国际标准包装\n• 双金属工艺带来较低的栅极电阻\n• 雪崩能量和电流额定值\n• 快速本征整流器\n• 较低的封装电感;

Littelfuse

力特

HiPerFET Power MOSFET Q2-Class

文件：140.84 Kbytes 页数：4 Pages

IXYS

艾赛斯

isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Current -ID= 38A@ TC=25℃ ·Drain Source Voltage -VDSS= 1000V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 250mΩ(Max)@VGS= 10V APPLICATIONS ·DC-DC converter ·Switched-mode and resonant-mode power supplies ·DC choppers ·Pulse generators

文件：566.23 Kbytes 页数：3 Pages

ISC

无锡固电

N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr

N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr Features • Double metal process for low gate resistance • miniBLOC, with Aluminium nitride isolation • Unclamped Inductive Switching (UIS) rated • Low package inductance • Fast intrinsic

文件：565.86 Kbytes 页数：4 Pages

IXYS

艾赛斯