首页 >IXFN120N20>规格书列表
零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
IXFN120N20 | HiPer FET Power MOSFETs HiPerFETTMPowerMOSFETsSingleMOSFETDie N-ChannelEnhancementModeAvalancheRated,Highdv/dt,Lowtrr Features •EncapsulatingepoxymeetsUL94V-0,flammabilityclassification •Internationalstandardpackage •miniBLOC,withAluminiumnitrideisolation •LowRDS(on)HDMOSTMprocess | IXYS IXYS Integrated Circuits Division | ||
IXFN120N20 | N-Channel MOSFET DESCRIPTION ·DrainCurrent-ID=120A@TC=25℃ ·DrainSourceVoltage -VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=17mΩ(Max)@VGS=10V APPLICATIONS ·DC-DCconverters ·DCchoppers ·Batterychargers ·Temperatureandlightingcontrols ·Switched-modeandresonant-modepowersu | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ||
N-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
N-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
MetalOxideSemiconductorFieldEffectTransistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
PolarHTHiPerFETPowerMOSFET N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features •InternationalStandardPackages •AvalancheRated •FastIntrinsicDiode •LowQG •LowRDS(on) •LowDrain-to-TabCapacitance •LowPackageInductance Advantages •EasytoMount •SpaceSavings | IXYS IXYS Integrated Circuits Division | |||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=120A@TC=25℃ ·DrainSourceVoltage- :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=17mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
HiPerFETPowerMOSFETs SingleMOSFETDie Features •Internationalstandardpackages •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •UnclampedInductiveSwitching(UIS) rated •Lowpackageinductance -easytodriveandtoprotect •Fastintrinsicrectifier Applicatio | IXYS IXYS Integrated Circuits Division | |||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=120A@TC=25℃ ·DrainSourceVoltage- :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=22mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
PolarHTHiPerFETPowerMOSFET N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features •InternationalStandardPackages •AvalancheRated •FastIntrinsicDiode •LowQG •LowRDS(on) •LowDrain-to-TabCapacitance •LowPackageInductance Advantages •EasytoMount •SpaceSavings | IXYS IXYS Integrated Circuits Division | |||
PolarHiPerFETPowerMOSFET | IXYS IXYS Integrated Circuits Division | |||
HiPerFETTMPowerMOSFETsISOPLUS247 HiPerFET™PowerMOSFET(ElectricallyIsolatedTab) N-ChannelEnhancementMode AvalancheRated FastIntrinsicRectifier Features •SiliconChiponDirect-CopperBond(DCB)Substrate •IsolatedMountingSurface •2500V~ElectricalIsolation •AvalancheRated •FastIntrinsicRectifier •Lo | IXYS IXYS Integrated Circuits Division | |||
PowerMOSFET | IXYS IXYS Integrated Circuits Division | |||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=90A@TC=25℃ ·DrainSourceVoltage- :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=23mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=120A@TC=25℃ ·DrainSourceVoltage- :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=17mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
HiPerFETPowerMOSFETs SingleMOSFETDie Features •Internationalstandardpackages •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •UnclampedInductiveSwitching(UIS) rated •Lowpackageinductance -easytodriveandtoprotect •Fastintrinsicrectifier Applicatio | IXYS IXYS Integrated Circuits Division | |||
N-ChannelEnhancementModeAvalancheRated | IXYS IXYS Integrated Circuits Division | |||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
N-ChannelEnhancementModeAvalancheRated | IXYS IXYS Integrated Circuits Division |
详细参数
- 型号:
IXFN120N20
- 功能描述:
MOSFET 200V 120A
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IXYS艾赛斯 |
1312+ |
SOT-227小信号场效应晶体管 |
330 |
一定是全新原厂原装正品货 小信号场效应晶体管 德国原厂地 |
询价 | ||
IXFN |
23+ |
NA |
5000 |
原厂授权一级代理 IGBT模块 可控硅 晶闸管 熔断器质保 |
询价 | ||
23+ |
59 |
专业模块销售,欢迎咨询 |
询价 | ||||
IXYS |
23+ |
模块 |
595 |
全新原装正品,量大可订货!可开17%增值票!价格优势! |
询价 | ||
IXYS |
07+/08+ |
SOT-227BminiBLOC |
326 |
询价 | |||
IXYS |
2022 |
SOT-227B |
58 |
原厂原装正品,价格超越代理 |
询价 | ||
IXYS |
23+ |
MOSFETN-CH200V120ASOT-22 |
1754 |
专业代理销售半导体模块,能提供更多数量 |
询价 | ||
IXYS |
16+ |
NA |
8800 |
原装现货,货真价优 |
询价 | ||
IXFN |
2020+ |
SOT-227 |
2 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 | ||
IXYS |
2020+ |
原厂封装 |
350000 |
100%进口原装正品公司现货库存 |
询价 |
相关规格书
更多- IXFN130N30
- IXFN140N20P
- IXFN150N15
- IXFN170N30P
- IXFN180N15P
- IXFN180N25T
- IXFN200N10P
- IXFN210N30P3
- IXFN230N10
- IXFN24N100
- IXFN27N80
- IXFN300N10P
- IXFN32N100P
- IXFN32N80P
- IXFN360N10T
- IXFN36N100
- IXFN38N80Q2
- IXFN420N10T
- IXFN44N50
- IXFN44N80P
- IXFN48N60P
- IXFN520N075T2
- IXFN56N90P
- IXFN60N80P
- IXFN64N50PD2
- IXFN70N60Q2
- IXFN80N50
- IXFN80N50Q2
- IXFN80N60P3
- IXFN82N60Q3
- IXFP102N15T
- IXFP10N80P
- IXFP12N50P
- IXFP14N60P
- IXFP22N60P3
- IXFP3N120
- IXFP5N100P
- IXFP5N50P3
- IXFP76N15T2
- IXFQ22N60P3
- IXFQ50N60P3
- IXFR120N20
- IXFR15N100Q3
- IXFR180N10
- IXFR18N90P
相关库存
更多- IXFN132N50P3
- IXFN140N30P
- IXFN160N30T
- IXFN180N10
- IXFN180N20
- IXFN200N07
- IXFN210N20P
- IXFN21N100Q
- IXFN230N20T
- IXFN26N90
- IXFN280N085
- IXFN320N17T2
- IXFN32N100Q3
- IXFN340N07
- IXFN360N15T2
- IXFN38N100P
- IXFN40N90P
- IXFN44N100P
- IXFN44N80
- IXFN48N50
- IXFN50N80Q2
- IXFN55N50
- IXFN60N60
- IXFN64N50P
- IXFN64N60P
- IXFN73N30
- IXFN80N50P
- IXFN80N50Q3
- IXFN82N60P
- IXFN90N30
- IXFP10N60P
- IXFP110N15T2
- IXFP130N10T2
- IXFP180N10T2
- IXFP26N50P3
- IXFP4N100Q
- IXFP5N100PM
- IXFP6N120P
- IXFP7N80P
- IXFQ28N60P3
- IXFQ60N50P3
- IXFR140N30P
- IXFR180N085
- IXFR180N15P
- IXFR200N10P