HiPer FET Power MOSFETs

HiPerFETTM Power MOSFETs Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Features • Encapsulating epoxy meets UL 94 V-0, flammability classification • International standard package • miniBLOC, with Aluminium nitride isolation • Low RDS (on) HDMOSTM process

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IXYS

艾赛斯

N-Channel MOSFET

DESCRIPTION ·Drain Current -ID= 120A@ TC=25℃ ·Drain Source Voltage -VDSS= 200V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 17mΩ(Max)@VGS= 10V APPLICATIONS ·DC-DC converters ·DC choppers ·Battery chargers ·Temperature and lighting controls ·Switched-mode and resonant-mode power su

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ISC

无锡固电

N通道HiPerFET

• 国际标准包装 \n• 高电流处理能力\n• 低RDS(on) HDMOS过程\n• 雪崩评级\n• 较低的封装电感\n• 快速本征二极管;

Littelfuse

力特

HiPerFETTM Power MOSFETs ISOPLUS247

HiPerFET™ Power MOSFET (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier Features • Silicon Chip on Direct-Copper Bond (DCB) Substrate • Isolated Mounting Surface • 2500V~ Electrical Isolation • Avalanche Rated • Fast Intrinsic Rectifier • Lo

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IXYS

艾赛斯

Power MOSFET

文件：180.52 Kbytes 页数：3 Pages

IXYS

艾赛斯

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 90A@ TC=25℃ ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) =23mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

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ISC

无锡固电