IXFN80N50

HiPerFET Power MOSFETs Single Die MOSFET

N-ChannelEnhancementModeAvalancheRated,Highdv/dt,Lowtrr Features •Internationalstandardpackages •miniBLOC,withAluminiumnitrideisolation •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductanc

IXFN80N50

HiPerFET Power MOSFETs Single Die MOSFET

N-ChannelEnhancementModeAvalancheRated,Highdv/dt,Lowtrr Features •Internationalstandardpackages •miniBLOC,withAluminiumnitrideisolation •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductanc

IXFN80N50P

PolarHV HiPerFET Power MOSFET

N-ChannelEnhancementModeAvalancheRated FastIntrinsicDiode Features •Fastintrinsicdiode •Internationalstandardpackage •UnclampedInductiveSwitching(UIS)rated •ULrecognized. •Isolatedmountingbase Advantages •Easytomount •Spacesavings •Highpowerdensity

IXFN80N50Q2

HiPerFET Power MOSFET Q2-Class

N-ChannelEnhancementModeAvalancheRated,LowQg,LowIntrinsicRg,HighdV/dt,Lowtrr Features •Doublemetalprocessforlowgateresistance •miniBLOC,withAluminiumnitrideisolation •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance •FastintrinsicRectifier Ap

IXFN80N50Q3

HiperFET Power MOSFET Q3-Class

VDSS=500V ID25=63A RDS(on)≤65mΩ trr≤250ns N-ChannelEnhancementMode FastIntrinsicRectifier Features InternationalStandardPackage LowIntrinsicGateResistance miniBLOCwithAluminumNitrideIsolation LowPackageInductance FastIntrinsicRectif

IXFN80N50Q2

Power MOSFET

IXFN80N50Q2_V01

Power MOSFET

IXFE80N50

HiPerFETPowerMOSFETsSingleDieMOSFET

HiPerFETPowerMOSFETsSingleDieMOSFET N-ChannelEnhancementMode AvalancheRated,Highdv/dt,Lowtrr Features •ConformstoSOT-227Boutline •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance •F

IXFK80N50

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=80A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=65mΩ(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Switchingapplications

IXFK80N50P

PolarHVHiPerFETPowerMOSFET

IXFR80N50P

PolarHVHiPerFETPowerMOSFETISOPLUS247

IXFX80N50

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=80A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=65mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconve

IXFX80N50P

PolarHVHiPerFETPowerMOSFET