HiPerFET Power MOSFETs Single Die MOSFET

N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Features • International standard packages • miniBLOC, with Aluminium nitride isolation • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductanc

文件：126.82 Kbytes 页数：4 Pages

IXYS

艾赛斯

HiPerFET Power MOSFETs Single Die MOSFET

N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Features • International standard packages • miniBLOC, with Aluminium nitride isolation • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductanc

文件：577.74 Kbytes 页数：4 Pages

IXYS

艾赛斯

N-Channel MOSFET

DESCRIPTION · Drain Current -ID= 80A@ TC=25℃ · Drain Source Voltage -VDSS= 500V(Min) · Static Drain-Source On-Resistance -RDS(on) = 55Ω(Max)@VGS= 10V APPLICATIONS · DC-DC converter · Battery Chargers · High speed power switch

文件：537 Kbytes 页数：3 Pages

ISC

无锡固电

N通道HiPerFET MOSFET

• 国际标准包装 \n• 高电流处理能力\n• 低RDS(on) HDMOS过程\n• 雪崩评级\n• 较低的封装电感\n• 快速本征二极管;

Littelfuse

力特

PolarHV HiPerFET Power MOSFET

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Features • Fast intrinsic diode • International standard package • Unclamped Inductive Switching (UIS) rated • UL recognized. • Isolated mounting base Advantages • Easy to mount • Space savings • High power density

文件：162.76 Kbytes 页数：5 Pages

IXYS

艾赛斯

HiPerFET Power MOSFET Q2-Class

N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg, High dV/dt, Low trr Features • Double metal process for low gate resistance • miniBLOC, with Aluminium nitride isolation • Unclamped Inductive Switching (UIS) rated • Low package inductance • Fast intrinsic Rectifier Ap

文件：118.83 Kbytes 页数：4 Pages

IXYS

艾赛斯

HiperFET Power MOSFET Q3-Class

VDSS = 500V ID25 = 63A RDS(on) ≤ 65mΩ trr ≤ 250ns N-Channel Enhancement Mode Fast Intrinsic Rectifier Features International Standard Package Low Intrinsic Gate Resistance miniBLOC with Aluminum Nitride Isolation Low Package Inductance Fast Intrinsic Rectif

文件：131.35 Kbytes 页数：5 Pages

IXYS

艾赛斯

Power MOSFET

文件：174.05 Kbytes 页数：5 Pages

IXYS

艾赛斯

Power MOSFET

文件：174.05 Kbytes 页数：5 Pages

IXYS

艾赛斯

N通道HiPerFET

• 国际标准包装\n• 双金属工艺带来较低的栅极电阻\n• 雪崩能量和电流额定值\n• 快速本征整流器\n• 较低的封装电感;

Littelfuse

力特