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IXFH75N10

HiPerFET Power MOSFETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Integrated Circuits Division

IXFH75N10

HIPERFET Power MOSFTETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Integrated Circuits Division

IXFH75N10

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent–ID=75A@TC=25℃ ·DrainSourceVoltage- :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=20mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXFH75N10Q

HIPER FET POWER MOSFETS Q CLASS

IXYS

IXYS Integrated Circuits Division

IXFH75N10Q

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent–ID=75A@TC=25℃ ·DrainSourceVoltage- :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=20mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

75N10

N-ChannelPowerMOSFET

NELLSEMINell Semiconductor Co., Ltd

尼爾半導體尼爾半導體股份有限公司

75N10

FastSwitchingSpeed

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

CEB75N10

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■100V,72A,RDS(ON)=13mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package

CETCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CEP75N10

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■100V,72A,RDS(ON)=13mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package

CETCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

HY75N10T

100V/75AN-ChannelEnhancementModeMOSFET

HYyueqing hongyi electronics co.,ltd

宏一乐清市宏一电子有限公司

IXFM75N10

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=75A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=20mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXFM75N10

HiPerFETPowerMOSFETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Integrated Circuits Division

IXFM75N10

HIPERFETPowerMOSFTETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Integrated Circuits Division

IXFT75N10Q

HIPERFETPOWERMOSFETSQCLASS

IXYS

IXYS Integrated Circuits Division

IXTA75N10P

N-ChannelEnhancementMode

IXYS

IXYS Integrated Circuits Division

IXTA75N10P

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXTC75N10

iscN-ChannelMOSFETTransistor

•FEATURES •DrainSourceVoltage-:VDSS=100V(Min) •Staticdrain-sourceon-resistance:RDS(on)≤20mΩ@VGS=10V •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation •APPLICATION •DC/DCConverter •Idealforhigh-frequencyswitching

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXTC75N10

N-ChannelEnhancementMode

MegaMOS™FET N-ChannelEnhancementMode Features •Internationalstandardpackages •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •Lowpackageinductance(

IXYS

IXYS Integrated Circuits Division

IXTH75N10

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXTH75N10

MegaMOSFET

IXYS

IXYS Integrated Circuits Division

详细参数

  • 型号:

    IXFH75N10

  • 功能描述:

    MOSFET 100V 75A

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
IXYS/LITTELFUSE
23+
TO-247
360
只做原装提供一站式配套供货中利达
询价
IXYS
23+
TO-3P
18000
询价
IXY
06+
TO-247
2000
原装
询价
IXY
D/C99+
210
询价
IXYS
23+
TO247
1858
特价库存
询价
IXYS
23+
TO-3P
5000
原装正品,假一罚十
询价
IXYS
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
23+
N/A
36100
正品授权货源可靠
询价
IXYS
20+
TO-247
36900
原装优势主营型号-可开原型号增税票
询价
I
2020+
TO-247
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
询价
更多IXFH75N10供应商 更新时间2024-5-14 13:19:00