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IXFK200N10P

Polar HiPerFET Power MOSFET

IXYS

IXYS Integrated Circuits Division

IXFK200N10P

Power MOSFET

IXYS

IXYS Integrated Circuits Division

IXFK200N10P_V01

Power MOSFET

IXYS

IXYS Integrated Circuits Division

IXFN200N10P

PolarHiPerFETPowerMOSFET

IXYS

IXYS Integrated Circuits Division

IXFR200N10

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=120A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=9mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXFR200N10P

PowerMOSFET

IXYS

IXYS Integrated Circuits Division

IXFR200N10P

PolarTMHiPerFETPowerMOSFET

IXYS

IXYS Integrated Circuits Division

IXFX200N10

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=200A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=7.5mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive ·ACandDCMotorDrives

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXFX200N10P

PowerMOSFET

IXYS

IXYS Integrated Circuits Division

IXFX200N10P

PolarHiPerFETPowerMOSFET

IXYS

IXYS Integrated Circuits Division

IXTC200N10T

TrenchMVPowerMOSFET

IXYS

IXYS Integrated Circuits Division

IXTC200N10T

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXTF200N10T

N-ChannelEnhancementModeAvalancheRated

IXYS

IXYS Integrated Circuits Division

IXTH200N10T

TrenchMVTMPowerMOSFETN-ChannelEnhancementModeAvalancheRated

IXYS

IXYS Integrated Circuits Division

IXTH200N10T

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXTK200N10P

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXTK200N10P

PolarHTTMPowerMOSFET

PolarHT™PowerMOSFET N-ChannelEnhancementMode Features •Internationalstandardpackages •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandtoprotect Advantages •Easytomount •Spacesavings •Highpowerdensity

IXYS

IXYS Integrated Circuits Division

IXTN200N10T

TrenchMVTMPowerMOSFET

IXYS

IXYS Integrated Circuits Division

IXTQ200N10T

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXTQ200N10T

TrenchMVTMPowerMOSFETN-ChannelEnhancementModeAvalancheRated

IXYS

IXYS Integrated Circuits Division

详细参数

  • 型号:

    IXFK200N10P

  • 功能描述:

    MOSFET 200 Amps 100V 0.0075 Rds

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
IXYS
23+
TO-264AA(IXFK)
30000
晶体管-分立半导体产品-原装正品
询价
IXYS
2024+
TO-264-3
32560
原装优势绝对有货
询价
IXYS
08+(pbfree)
TO-264
8866
询价
IXYS
23+
TO-264
18000
询价
IXYS
23+
TO-264
5000
原装正品,假一罚十
询价
23+
N/A
46290
正品授权货源可靠
询价
IXYS
23+
TO-264
12300
全新原装真实库存含13点增值税票!
询价
IXYS
18+
TO-3PL
2050
公司大量全新原装 正品 随时可以发货
询价
IXYS
1931+
N/A
18
加我qq或微信,了解更多详细信息,体验一站式购物
询价
IXYS/艾赛斯
23+
TO-264
90000
只做原厂渠道价格优势可提供技术支持
询价
更多IXFK200N10P供应商 更新时间2024-5-2 14:14:00