GigaMOS Trench HiperFET Power MOSFET

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艾赛斯

isc N-Channel MOSFET Transistor

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无锡固电

N-Channel: Trench-Gate Power MOSFETs with HiPerFET™ Options

·Trench Gate MOSFET Technology\n·Break down voltages VDSS: 36V to 300V\n·Current ratings ID25: 12A to 660A\n·Ultra-low on-state resistance RDS(on)\n·Superior avalanche ruggedness\n·Junction temperature TJ up to 175°C\n·International standard packages;

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力特

GigaMOS Trench HiperFET Power MOSFET

文件：181.33 Kbytes 页数：6 Pages

IXYS

艾赛斯

N-Channel MOSFET

DESCRIPTION · Drain Current -ID= 360A@ TC=25℃ · Drain Source Voltage -VDSS= 100V(Min) · Static Drain-Source On-Resistance -RDS(on) = 2.6mΩ(Max)@VGS= 10V APPLICATIONS · DC-DC converter · Battery Chargers · High Speed Power Switching Applications

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ISC

无锡固电

isc N-Channel MOSFET Transistor

文件：381.74 Kbytes 页数：2 Pages

ISC

无锡固电