HiPerRF Power MOSFETs

HiPerFET™ Power MOSFETs N-Channel Enhancement Mode Avalanche Rated Fast Intrisic Diode Features • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Avalanche rated • Low package inductance • Fast intrinsic rectifier Applications •

文件：99.43 Kbytes 页数：2 Pages

IXYS

艾赛斯

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 24A@ TC=25℃ ·Drain Source Voltage- : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.39Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

文件：329.04 Kbytes 页数：2 Pages

ISC

无锡固电

HiPerFETTM Power MOSFETs

文件：137.63 Kbytes 页数：4 Pages

IXYS

艾赛斯

N通道HiPerFET MOSFET

• 国际标准包装 \n• 高电流处理能力\n• 低RDS(on) HDMOS过程\n• 雪崩评级\n• 较低的封装电感\n• 快速本征二极管;

Littelfuse

力特

HiPerRF Power MOSFETs

HiPerFET™ Power MOSFETs N-Channel Enhancement Mode Avalanche Rated Fast Intrisic Diode Features • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Avalanche rated • Low package inductance • Fast intrinsic rectifier Applications •

文件：99.43 Kbytes 页数：2 Pages

IXYS

艾赛斯

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 24A@ TC=25℃ ·Drain Source Voltage- : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.39Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

文件：329.07 Kbytes 页数：2 Pages

ISC

无锡固电

HiPerRF Power MOSFETs F-Class: MegaHertz Switching

HiPerRFTM Power MOSFETs F-Class: MegaHertz Switching N-Channel Enhancement Mode Avalanche Rated, Low Q g, Low Intrinsic Rg High dV/dt, Low trr Features • RF capable MOSFETs • Double metal process for low gate resistance • Unclamped Inductive Switching (UIS) rated • Low package inductance

文件：161.07 Kbytes 页数：4 Pages

IXYS

艾赛斯

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 24A@ TC=25℃ ·Drain Source Voltage- : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.44Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

文件：329.24 Kbytes 页数：2 Pages

ISC

无锡固电

Advance Technical Information

HiperFET Power MOSFETs Q3-Class N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier Features • Low Intrinsic Gate Resistance • Low Package Inductance • Fast Intrinsic Rectifier • Low RDS(on) and QG Advantages • High Power Density • Easy to Mount • Space Savings Applica

文件：131.38 Kbytes 页数：5 Pages

IXYS

艾赛斯

HiPerFETTM Power MOSFETs

文件：137.63 Kbytes 页数：4 Pages

IXYS

艾赛斯