HiPerFET Power MOSFETs Q-CLASS

Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr Features • IXYS advanced low Qg process • Low gate charge and capacitances - easier to drive - faster switching • International standard packages • Low RDS (on) • Rated for unclamped Inducti

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IXYS

艾赛斯

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 27A@ TC=25℃ ·Drain Source Voltage- : VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.3Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

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ISC

无锡固电

HiPerFET Power MOSFETs Q-CLASS

文件：96.66 Kbytes 页数：2 Pages

IXYS

艾赛斯

N通道HiPerFET

• 国际标准包装\n• 坚固的多晶硅栅极单元结构\n• 适用于非钳位感应开关（UIS）\n• 快速本征整流器;

Littelfuse

力特