isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 64A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 85mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

文件：328.77 Kbytes 页数：2 Pages

ISC

无锡固电

Polar Power MOSFET HiPerFET

文件：146.39 Kbytes 页数：4 Pages

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• 国际标准包装\n• 动态dv/dt额定值\n• 雪崩评级\n• 快速本征整流器\n• 较低的QG和RDS(on)\n• 较低的漏极至弹片电容\n• 较低的封装电感;

Littelfuse

力特

PolarHVTM HiPerFETPower MOSFET

文件：58.21 Kbytes 页数：2 Pages

IXYS

艾赛斯

Polar Power MOSFET HiPerFET

文件：126.46 Kbytes 页数：4 Pages

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 64A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 85mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

文件：371.93 Kbytes 页数：2 Pages

ISC

无锡固电