HiPerFET Power MOSFETs Q-Class

N-Channel Enhancement Mode Avalanche Rated Low Qg,High dv/dt Features ● IXYS advanced low Qg process ● Low gate charge and capacitances - easier to drive - faster switching ● International standard packages ● Low RDS (on) ● Unclamped Inductive Switching (UIS) rated ● Molding epox

文件：90.81 Kbytes 页数：2 Pages

IXYS

艾赛斯

HiPerFET Power MOSFETs Q-Class

N-Channel Enhancement Mode Avalanche Rated Low Qg,High dv/dt Features ● IXYS advanced low Qg process ● Low gate charge and capacitances - easier to drive - faster switching ● International standard packages ● Low RDS (on) ● Unclamped Inductive Switching (UIS) rated ● Molding epox

文件：90.81 Kbytes 页数：2 Pages

IXYS

艾赛斯

StarMOST Power MOSFET

VDSS = 800V ID25 = 7.5A RDS(ON) = 1.2Ω Description StarMOS is a new generation of high voltage N–Channel enhancement mode power MOSFETs. This new technology minimises the JFET effect, increases packing density and reduces the on-resistance. StarMOS also achieves faster switching s

文件：201.75 Kbytes 页数：2 Pages

GOOD-ARK

固锝电子

isc N-Channel MOSFET Transistor

文件：273.34 Kbytes 页数：2 Pages

ISC

无锡固电