Polar HiperFET Power MOSFET

Polar™ HiperFET™ Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier Features • International Standard Packages • Fast Intrinsic Rectifier • Avalanche Rated • Low RDS(ON) and QG • Low Package Inductance Advantages • High Power Density • Easy to Mount • Spac

文件：146.64 Kbytes 页数：5 Pages

IXYS

艾赛斯

N通道HiPerFET

• 国际标准包装\n• 动态dv/dt额定值\n• 雪崩评级\n• 快速本征整流器\n• 较低的QG和RDS(on)\n• 较低的漏极至弹片电容\n• 较低的封装电感;

Littelfuse

力特

HiPerFET Power MOSFET

HiPerFET™ Power MOSFET Single MOSFET Die Features • International standard packages • Encapsulating epoxy meets UL94V-0, flammability classification • miniBLOC with Aluminium nitride isolation • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Swi

文件：145.06 Kbytes 页数：4 Pages

IXYS

艾赛斯

isc N-Channel MOSFET Transistor

文件：310.87 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel Enhancement Mode Avalanche Rated

文件：170.28 Kbytes 页数：5 Pages

IXYS

艾赛斯