HiPerFET Power MOSFETs Q-Class

VDSS = 100 V ID25 = 80 A RDS(on) = 15 mΩ trr≤ 200ns N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances Features • IXYS advanced low gate charge process • International standard packages • Low gate charge and capacitance - ea

文件：55.78 Kbytes 页数：2 Pages

IXYS

艾赛斯

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 80A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 15mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

文件：372.7 Kbytes 页数：2 Pages

ISC

无锡固电

N通道HiPerFET

• 国际标准包装\n• 坚固的多晶硅栅极单元结构\n• 适用于非钳位感应开关（UIS）\n• 快速本征整流器;

Littelfuse

力特

HiPerFET Power MOSFETs

VDSS = 100 V ID25 = 80 A RDS(on) = 12.5 mΩ trr ≤ 200 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt Features International standard packages Low RDS (on) Rated for unclamped Inductive load switching (UIS) Molding epoxies meet UL 94 V-0 flammabilit

文件：93.07 Kbytes 页数：2 Pages

IXYS

艾赛斯

HiPerFET Power MOSFETs Q-Class

VDSS = 100 V ID25 = 80 A RDS(on) = 15 mΩ trr≤ 200ns N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances Features • IXYS advanced low gate charge process • International standard packages • Low gate charge and capacitance - ea

文件：55.78 Kbytes 页数：2 Pages

IXYS

艾赛斯

isc N-Channel MOSFET Transistor

文件：294.45 Kbytes 页数：2 Pages

ISC

无锡固电