HiPerFET Power MOSFETs Q-Class

N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Features • Low gate charge • International standard packages • EpoxymeetUL94V-0, flammability classification • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Avalanche energy and current rated • Fast in

文件：70.59 Kbytes 页数：2 Pages

IXYS

艾赛斯

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 80A@ TC=25℃ ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 28mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

文件：372.62 Kbytes 页数：2 Pages

ISC

无锡固电

N通道HiPerFET

• 国际标准包装\n• 坚固的多晶硅栅极单元结构\n• 适用于非钳位感应开关（UIS）\n• 快速本征整流器;

Littelfuse

力特

HiPerFET Power MOSFETs

HiPerFET Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Features • International standard packages • Molding epoxies meet UL94V-0 flammability classification • Low RDS (on) HDMOSTM process • Unclamped Inductive Switching (UIS) rated • Fast intrinsic rectifier

文件：100.75 Kbytes 页数：4 Pages

IXYS

艾赛斯

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 80A@ TC=25℃ ·Drain Source Voltage : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 30mΩ(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching applications

文件：324.61 Kbytes 页数：2 Pages

ISC

无锡固电

HiPerFET Power MOSFETs Q-Class

N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Features • Low gate charge • International standard packages • EpoxymeetUL94V-0, flammability classification • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Avalanche energy and current rated • Fast in

文件：70.59 Kbytes 页数：2 Pages

IXYS

艾赛斯