HiPerFET Power MOSFETs

N-Channel Enhancement Mode Avalanche Rated High dv/dt, Low Qg Features • IXYS advanced low Qg process • International standard packages • Low gate charge and capacitance - easier to drive - faster switching • Low RDS (on) • Unclamped Inductive Switching (UIS) rated • Molding epoxi

文件：356.34 Kbytes 页数：2 Pages

IXYS

艾赛斯

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 58A@ TC=25℃ ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 40mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

文件：372.66 Kbytes 页数：2 Pages

ISC

无锡固电

HiPerFET Power MOSFETs

HiPerFETs The hIPerFET family of Power MOSFETs is designed to provice superior dv/dt, performance while eliminating the need for discrete, fase recovery free wheeling rectifiers In a board range of power switching applications.

文件：104.03 Kbytes 页数：4 Pages

IXYS

艾赛斯

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 58A@ TC=25℃ ·Drain Source Voltage- VDSS=200V(Min) ·Static Drain-Source On-Resistance - RDS(on) = 40mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：276.4 Kbytes 页数：2 Pages

ISC

无锡固电

HiPerFET Power MOSFETs ISOPLUS247 Q-Class

HiPerFET™ Power MOSFETs ISOPLUS247™ Q-Class (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances Features • Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface

文件：96.64 Kbytes 页数：2 Pages

IXYS

艾赛斯