HiPerFET Power MOSFETs ISOPLUS247 Q-Class

HiPerFET™ Power MOSFETs ISOPLUS247™ Q-Class (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances Features • Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface

文件：96.64 Kbytes 页数：2 Pages

IXYS

艾赛斯

N通道HiPerFET MOSFET

• 国际标准包装\n• 坚固的多晶硅栅极单元结构\n• 适用于非钳位感应开关（UIS）\n• 快速本征整流器;

Littelfuse

力特

HiPerFET Power MOSFETs

HiPerFETs The hIPerFET family of Power MOSFETs is designed to provice superior dv/dt, performance while eliminating the need for discrete, fase recovery free wheeling rectifiers In a board range of power switching applications.

文件：104.03 Kbytes 页数：4 Pages

IXYS

艾赛斯

HiPerFET Power MOSFETs

N-Channel Enhancement Mode Avalanche Rated High dv/dt, Low Qg Features • IXYS advanced low Qg process • International standard packages • Low gate charge and capacitance - easier to drive - faster switching • Low RDS (on) • Unclamped Inductive Switching (UIS) rated • Molding epoxi

文件：356.34 Kbytes 页数：2 Pages

IXYS

艾赛斯