IXFR58N20Q

HiPerFET Power MOSFETs ISOPLUS247 Q-Class

HiPerFET™PowerMOSFETsISOPLUS247™Q-Class(ElectricallyIsolatedBackSurface) N-ChannelEnhancementMode AvalancheRated,HighdV/dt LowGateChargeandCapacitances Features •SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface

IXFR58N20Q

N通道HiPerFET MOSFET

• 国际标准包装\n• 坚固的多晶硅栅极单元结构\n• 适用于非钳位感应开关（UIS）\n• 快速本征整流器\n;

IXFT58N20

HiPerFETPowerMOSFETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXFT58N20Q

HiPerFETPowerMOSFETs

N-ChannelEnhancementModeAvalancheRatedHighdv/dt,LowQg Features •IXYSadvancedlowQgprocess •Internationalstandardpackages •Lowgatechargeandcapacitance -easiertodrive -fasterswitching •LowRDS(on) •UnclampedInductiveSwitching(UIS)rated •Moldingepoxi

IXFX32N50

IXYS
TO-247