IXFH44N50Q3

HiperFETTM Power MOSFETs Q3-Class

N-ChannelEnhancementModeAvalancheRatedFastIntrinsicRectifier VDSS=500V ID25=44A RDS(on)≤140mΩ trr≤250ns Features LowIntrinsicGateResistance InternationalStandardPackages LowPackageInductance FastIntrinsicRectifier LowRDS(on)andQG

IXFH44N50Q3

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent–ID=44A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=140mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

IXFR44N50Q3

PreliminaryTechnicalInformation

N-ChannelEnhancementModeFastIntrinsicRectifier VDSS=500V ID25=25A RDS(on)≤154mΩ trr≤250ns Features SiliconChiponDirect-CopperBond(DCB)Substrate IsolatedMountingSurface LowIntrinsicGateResistance 2500V~ElectricalIsolation FastIntrinsicRect

IXFT44N50Q3

HiperFETTMPowerMOSFETsQ3-Class

N-ChannelEnhancementModeAvalancheRatedFastIntrinsicRectifier VDSS=500V ID25=44A RDS(on)≤140mΩ trr≤250ns Features LowIntrinsicGateResistance InternationalStandardPackages LowPackageInductance FastIntrinsicRectifier LowRDS(on)andQG