HiPerFET Power MOSFETs Q-Class

Features • IXYS advanced low Qg process • Low gate charge and capacitances - easier to drive - faster switching • International standard packages • Low RDS (on) • Unclamped Inductive Switching (UIS) rated • Molding epoxies meet UL94V-0 flammability classification Advantages • Eas

文件：90.61 Kbytes 页数：4 Pages

IXYS

艾赛斯

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 4A@ TC=25℃ ·Drain Source Voltage- : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 3.0Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

文件：372.59 Kbytes 页数：2 Pages

ISC

无锡固电

N通道HiPerFET

• 国际标准包装\n• 坚固的多晶硅栅极单元结构\n• 适用于非钳位感应开关（UIS）\n• 快速本征整流器;

Littelfuse

力特

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 4A@ TC=25℃ ·Drain Source Voltage -VDSS= 1000V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 3.3Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and PFC Circuits..

文件：295.59 Kbytes 页数：2 Pages

ISC

无锡固电

Polar HiPerFET Power MOSFET

文件：157.57 Kbytes 页数：4 Pages

IXYS

艾赛斯

Power MOSFET

文件：270.9 Kbytes 页数：5 Pages

IXYS

艾赛斯