HiPerFETTM Power MOSFETs Q-Class

N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Features • IXYS advanced low Qg process • International standard packages • EpoxymeetUL94V-0, flammability classification • Low RDS (on) low Qg • Avalanche energy and current rated • Fast intrinsic rectifier Advantages • E

文件：72.52 Kbytes 页数：2 Pages

IXYS

艾赛斯

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 20A@ TC=25℃ ·Drain Source Voltage : VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.42Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

文件：337.73 Kbytes 页数：2 Pages

ISC

无锡固电

N通道HiPerFET

• 国际标准包装\n• 坚固的多晶硅栅极单元结构\n• 适用于非钳位感应开关（UIS）\n• 快速本征整流器;

Littelfuse

力特

HiPerFETTM Power MOSFETs Q-Class

N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Features • IXYS advanced low Qg process • International standard packages • EpoxymeetUL94V-0, flammability classification • Low RDS (on) low Qg • Avalanche energy and current rated • Fast intrinsic rectifier Advantages • E

文件：72.52 Kbytes 页数：2 Pages

IXYS

艾赛斯

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 20A@ TC=25℃ ·Drain Source Voltage- : VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.42Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

文件：328.98 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 11A@ TC=25℃ ·Drain Source Voltage -VDSS= 800V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 500mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：330.15 Kbytes 页数：2 Pages

ISC

无锡固电