isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 40A@ TC=25℃ ·Drain Source Voltage- : VDSS= 300V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 85mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

文件：372.77 Kbytes 页数：2 Pages

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无锡固电

HiPerFET Power MOSFETs Q-Class

N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Features • International Standard Packages • Low Intrinsic Gate Resistance • Low Package Inductance • Fast Intrinsic Rectifier • Low RDS(on) and QG Applications • DC-DC Converters • Battery Chargers • Switch-Mode and Resonan

文件：52.15 Kbytes 页数：2 Pages

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艾赛斯

HiPerFET Power MOSFETs Q-Class

文件：135.53 Kbytes 页数：5 Pages

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艾赛斯

HiPerFET Power MOSFETs

文件：37.01 Kbytes 页数：2 Pages

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艾赛斯

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 40A@ TC=25℃ ·Drain Source Voltage- : VDSS= 300V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 80mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

文件：362.65 Kbytes 页数：2 Pages

ISC

无锡固电

HIPERFET Power MOSFTETs

HiPerFETs The hIPerFET family of Power MOSFETs is designed to provice superior dv/dt, performance while eliminating the need for discrete, fase recovery free wheeling rectifiers In a board range of power switching applications.

文件：295.27 Kbytes 页数：8 Pages

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艾赛斯