PolarHV HiPerFET Power MOSFET

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode VDSS = 500 V ID25 = 44 A RDS(on) ≤140 mΩ trr ≤200 ns Features International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect

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IXYS

艾赛斯

isc N-Channel MOSFET Transistor

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ISC

无锡固电

N通道HiPerFET MOSFET

• 国际标准包装\n• 动态dv/dt额定值\n• 雪崩评级\n• 快速本征整流器\n• 较低的QG和RDS(on)\n• 较低的漏极至弹片电容\n• 较低的封装电感;

Littelfuse

力特

HiPerFET Power MOSFETs

文件：93.51 Kbytes 页数：4 Pages

IXYS

艾赛斯

HiPerFET Power MOSFETs

N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Features International standard packages Molding epoxies meet UL 94 V-0 flammability classification SOT-227B miniBLOC with aluminium nitride isolation Low RDS (on) HDMOS™ process
Unclamped Inductive Switching (UIS

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IXYS

艾赛斯

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 44A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.12Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

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ISC

无锡固电