N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated

PolarHV™ Power MOSFET N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated Features • Fast Recovery diode • Unclamped Inductive Switching (UIS) rated • International standard packages • Low package inductance - easy to drive and to protect Advantages • Easy to mount • Space savi

文件：248.46 Kbytes 页数：5 Pages

IXYS

艾赛斯

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 26A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.27Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

文件：336.94 Kbytes 页数：2 Pages

ISC

无锡固电

N通道HiPerFET

• 国际标准包装\n• 动态dv/dt额定值\n• 雪崩评级\n• 快速本征整流器\n• 较低的QG和RDS(on)\n• 较低的漏极至弹片电容\n• 较低的封装电感;

Littelfuse

力特

HiPerFETTM Power MOSFETs Q-Class

N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Features ● Low gate charge ● International standard packages ● Epoxy meet UL 94 V-0, flammability classification ● Low RDS (on) HDMOSTM process ● Rugged polysilicon gate cell structure ● Avalanche energy and current rated ● Fa

文件：107.91 Kbytes 页数：2 Pages

IXYS

艾赛斯

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 26A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.25Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

文件：337.14 Kbytes 页数：2 Pages

ISC

无锡固电

HiPerFET Power MOSFETs Q-Class

Features ● Low gate charge ● International standard packages ● Epoxy meet UL 94 V-0, flammability classification ● Low RDS (on) HDMOSTM process ● Rugged polysilicon gate cell structure ● Avalanche energy and current rated ● Fast intrinsic Rectifier Advantages ● Easy to mount ● Space savi

文件：103.5 Kbytes 页数：2 Pages

IXYS

艾赛斯