PolarHV HiPerFET Power MOSFET

PolarHV™ HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Features • International standard packages • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect Advantages • Easy to mount • Space savings •

文件：232.16 Kbytes 页数：5 Pages

IXYS

艾赛斯

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 14A@ TC=25℃ ·Drain Source Voltage : VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.72Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

文件：372.42 Kbytes 页数：2 Pages

ISC

无锡固电

N通道HiPerFET

• 国际标准包装\n• 雪崩评级\n• 较低的QG和RDS(on)\n• 较低的封装电感;

Littelfuse

力特

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=14A@ TC=25℃ ·Drain Source Voltage -VDSS=800V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 720mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：312.56 Kbytes 页数：2 Pages

ISC

无锡固电

PolarHV HiPerFET Power MOSFET

PolarHV™ HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Features • International standard packages • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect Advantages • Easy to mount • Space savings •

文件：232.16 Kbytes 页数：5 Pages

IXYS

艾赛斯

PolarHV HiPerFET Power MOSFET

PolarHV™ HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Features • International standard packages • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect Advantages • Easy to mount • Space savings •

文件：232.16 Kbytes 页数：5 Pages

IXYS

艾赛斯