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FEATURES ·Drain Current : ID= 16A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.4Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

文件：337.4 Kbytes 页数：2 Pages

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PolarHV™ HiperFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Features • International Standard Packages • Avalanche Rated • Fast Intrinsic Diode • Low Package Inductance Advantages • High Power Density • Easy to Mount • Space Savings Applications • S

文件：221.5 Kbytes 页数：4 Pages

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艾赛斯

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文件：331.66 Kbytes 页数：6 Pages

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Polar3 ™ HiPerFET™ Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier Features • International Standard Packages • Fast Intrinsic Rectifier • Avalanche Rated • Low RDS(ON) and QG • Low Package Inductance Advantages • High Power Density • Easy to Mount • Sp

文件：283.26 Kbytes 页数：6 Pages

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 16A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.36Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

文件：337.65 Kbytes 页数：2 Pages

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N通道HiPerFET

• 国际标准包装\n• 动态dv/dt额定值\n• 雪崩评级\n• 快速本征整流器\n• 较低的QG和RDS(on)\n• 较低的漏极至弹片电容\n• 较低的封装电感;

Littelfuse

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N通道HiPerFET

• 超低通态电阻RDS(ON)和栅极电荷Qg\n• 快速体二极管\n• dv/dt强度\n• 雪崩评级\n• 较低的封装电感\n• 国际标准包装;

Littelfuse

力特