PolarHV HiPerFET Power MOSFET

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Features • International standard packages • Fast recovery diode • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect Advantages • Easy to mount • Space savings • High powe

文件：331.96 Kbytes 页数：5 Pages

IXYS

艾赛斯

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 20A@ TC=25℃ ·Drain Source Voltage : VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.52Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

文件：336.99 Kbytes 页数：2 Pages

ISC

无锡固电

N通道HiPerFET

• 国际标准包装\n• 动态dv/dt额定值\n• 雪崩评级\n• 快速本征整流器\n• 较低的QG和RDS(on)\n• 较低的漏极至弹片电容\n• 较低的封装电感;

Littelfuse

力特

HiPerFETTM Power MOSFETs Q-Class

N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Features • IXYS advanced low Qg process • International standard packages • EpoxymeetUL94V-0, flammability classification • Low RDS (on) low Qg • Avalanche energy and current rated • Fast intrinsic rectifier Advantages • E

文件：72.52 Kbytes 页数：2 Pages

IXYS

艾赛斯

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 20A@ TC=25℃ ·Drain Source Voltage : VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.42Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

文件：337.73 Kbytes 页数：2 Pages

ISC

无锡固电

HiPerFETTM Power MOSFETs Q-Class

N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Features • IXYS advanced low Qg process • International standard packages • EpoxymeetUL94V-0, flammability classification • Low RDS (on) low Qg • Avalanche energy and current rated • Fast intrinsic rectifier Advantages • E

文件：72.52 Kbytes 页数：2 Pages

IXYS

艾赛斯