PolarHV HiPerFET Power MOSFET

N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Features • International standard packages • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect Advantages • Easy to mount • Space savings • High power density

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艾赛斯

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 18A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.4Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

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ISC

无锡固电

isc N-Channel MOSFET Transistor

文件：384.12 Kbytes 页数：2 Pages

ISC

无锡固电

Preliminary Technical Information

文件：189.15 Kbytes 页数：6 Pages

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艾赛斯

Preliminary Technical Information

文件：189.15 Kbytes 页数：6 Pages

IXYS

艾赛斯