IXFH15N80Q

HiPerFET Power MOSFETs Q-Class

Features •IXYSadvancedlowQgprocess •Internationalstandardpackages •LowRDS(on) •UnclampedInductiveSwitching(UIS)rated •Fastswitching •MoldingepoxiesmeetUL94V-0 flammabilityclassification Advantages •Easytomount •Spacesavings •Highpowerdensity

IXFH15N80Q

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=15A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.6Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

IXFH15N80Q

N通道HiPerFET

• 国际标准包装\n• 坚固的多晶硅栅极单元结构\n• 适用于非钳位感应开关（UIS）\n• 快速本征整流器\n;

IXFR15N80

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=13A@TC=25℃ ·DrainSourceVoltage-VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.6Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

IXFR15N80Q

HiPerFETPowerMOSFETsISOPLUS247QClass

HiPerFET™PowerMOSFETsISOPLUS247™QClass(ElectricallyIsolatedBackSurface) N-ChannelEnhancementModeAvalancheRated,HighdV/dt LowGateChargeandCapacitances Features •SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -

IXFT15N80Q

HiPerFETPowerMOSFETsQ-Class

Features •IXYSadvancedlowQgprocess •Internationalstandardpackages •LowRDS(on) •UnclampedInductiveSwitching(UIS)rated •Fastswitching •MoldingepoxiesmeetUL94V-0 flammabilityclassification Advantages •Easytomount •Spacesavings •Highpowerdensity