isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 13A@ TC=25℃ ·Drain Source Voltage -VDSS= 800V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.6Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：330.22 Kbytes 页数：2 Pages

ISC

无锡固电

HiPerFET Power MOSFETs ISOPLUS247 Q Class

HiPerFET™ Power MOSFETs ISOPLUS247™ Q Class (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances Features • Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface -

文件：35.84 Kbytes 页数：2 Pages

IXYS

艾赛斯

N-Channel: Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)

·The IXYS most popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering Low gate charge and excellent ruggedness with a fast intrinsic diode. Available in many standard industrial packages including isolated types;

Littelfuse

力特

HiPerFET Power MOSFETs Q-Class

Features • IXYS advanced low Qg process • International standard packages • Low RDS (on) • Unclamped Inductive Switching (UIS) rated • Fast switching • Molding epoxies meet UL94V-0 flammability classification Advantages • Easy to mount • Space savings • High power density

文件：111.9 Kbytes 页数：4 Pages

IXYS

艾赛斯

N-Channel MOSFET uses advanced trench technology

文件：1.73603 Mbytes 页数：7 Pages

DOINGTER

杜因特

E Series Power MOSFET

FEATURES • Low figure-of-merit (FOM) Ron x Qg • Low effective capacitance (Co(er)) • Reduced switching and conduction losses • Avalanche energy rated (UIS) • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Server and telecom power

文件：166.42 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

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