| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
IXFR15N80 | isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=13A@TC=25℃ ·DrainSourceVoltage-VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.6Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | |
HiPerFET Power MOSFETs ISOPLUS247 Q Class HiPerFET™PowerMOSFETsISOPLUS247™QClass(ElectricallyIsolatedBackSurface) N-ChannelEnhancementModeAvalancheRated,HighdV/dt LowGateChargeandCapacitances Features •SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface - | IXYS IXYS Integrated Circuits Division | IXYS | ||
N-ChannelSuperJunctionMOSFET | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司 | HMSEMI | ||
HiPerFETISOPLUS220MOSFETQ-ClassElectricallyIsolatedBackSurface | IXYS IXYS Integrated Circuits Division | IXYS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=13A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.65Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC- | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=15A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.6Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
HiPerFETPowerMOSFETs HiPerFET™PowerMOSFETs N-ChannelEnhancementMode Highdv/dt,Lowtrr,HDMOSTMFamily Features •Internationalstandardpackages •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodrive | IXYS IXYS Integrated Circuits Division | IXYS | ||
HiPerFETPowerMOSFETsQ-Class Features •IXYSadvancedlowQgprocess •Internationalstandardpackages •LowRDS(on) •UnclampedInductiveSwitching(UIS)rated •Fastswitching •MoldingepoxiesmeetUL94V-0 flammabilityclassification Advantages •Easytomount •Spacesavings •Highpowerdensity | IXYS IXYS Integrated Circuits Division | IXYS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=15A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.6Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
HiPerFETPowerMOSFETsQ-Class Features •IXYSadvancedlowQgprocess •Internationalstandardpackages •LowRDS(on) •UnclampedInductiveSwitching(UIS)rated •Fastswitching •MoldingepoxiesmeetUL94V-0 flammabilityclassification Advantages •Easytomount •Spacesavings •Highpowerdensity | IXYS IXYS Integrated Circuits Division | IXYS | ||
N-ChannelMOSFETusesadvancedtrenchtechnology | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 杜因特深圳市杜因特半导体有限公司 | DOINGTER | ||
ESeriesPowerMOSFET FEATURES •Lowfigure-of-merit(FOM)RonxQg •Loweffectivecapacitance(Co(er)) •Reducedswitchingandconductionlosses •Avalancheenergyrated(UIS) •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 APPLICATIONS •Serverandtelecompower | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
EFSeriesPowerMOSFETWithFastBodyDiode FEATURES •Lowfigure-of-merit(FOM)RonxQg •Loweffectivecapacitance(Co(er)) •Reducedswitchingandconductionlosses •Avalancheenergyrated(UIS) •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 APPLICATIONS •Serverandtelecompower | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=2.7A@TC=25℃ ·DrainSourceVoltage-VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=2.0Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
ESeriesPowerMOSFET FEATURES •Lowfigure-of-merit(FOM)RonxQg •Loweffectivecapacitance(Co(er)) •Reducedswitchingandconductionlosses •Avalancheenergyrated(UIS) •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 APPLICATIONS •Serverandtelecompower | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
ESeriesPowerMOSFET FEATURES •Lowfigure-of-merit(FOM)RonxQg •Loweffectivecapacitance(Co(er)) •Reducedswitchingandconductionlosses •Avalancheenergyrated(UIS) •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 APPLICATIONS •Serverandtelecompower | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
EFSeriesPowerMOSFETWithFastBodyDiode FEATURES •Lowfigure-of-merit(FOM)RonxQg •Loweffectivecapacitance(Co(er)) •Reducedswitchingandconductionlosses •Avalancheenergyrated(UIS) •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 APPLICATIONS •Serverandtelecompower | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
ESeriesPowerMOSFET FEATURES •Lowfigure-of-merit(FOM)RonxQg •Loweffectivecapacitance(Co(er)) •Reducedswitchingandconductionlosses •Avalancheenergyrated(UIS) •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 APPLICATIONS •Serverandtelecompower | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
EFSeriesPowerMOSFETWithFastBodyDiodes FEATURES •Lowfigure-of-merit(FOM)RonxQg •Loweffectivecapacitance(Co(er)) •Reducedswitchingandconductionlosses •Avalancheenergyrated(UIS) •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 APPLICATIONS •Serverandtelecompower | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay |
详细参数
- 型号：
IXFR15N80
- 功能描述：
MOSFET 13 Amps 800V 0.6 Rds
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IXYS |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 | ||
VB |
2019 |
ISOPLUS247TM |
55000 |
绝对原装正品假一罚十! |
询价 | ||
IXYS |
16+ |
TO-247 |
2100 |
公司大量全新现货 随时可以发货 |
询价 | ||
IXYS |
1931+ |
N/A |
18 |
加我qq或微信，了解更多详细信息,体验一站式购物 |
询价 | ||
IXYS |
1809+ |
TO-247 |
326 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
IXYS/艾赛斯 |
23+ |
ISOPLUS247 |
10000 |
公司只做原装正品 |
询价 | ||
IXYS |
22+ |
NA |
18 |
加我QQ或微信咨询更多详细信息, |
询价 | ||
IXYS |
22+ |
ISOPLUS247? |
9000 |
原厂渠道,现货配单 |
询价 | ||
IXYS |
21+ |
ISOPLUS247? |
13880 |
公司只售原装,支持实单 |
询价 | ||
IXYS/艾赛斯 |
23+ |
ISOPLUS247 |
6000 |
原装正品，支持实单 |
询价 |
相关规格书
更多- IXFR15N80Q
- IXFR16N80P
- IXFR180N07
- IXFR180N10
- IXFR1871
- IXFR200N10P
- IXFR20N100P
- IXFR20N80P
- IXFR21N100Q_03
- IXFR24N100
- IXFR24N100Q3
- IXFR24N50Q
- IXFR24N90P
- IXFR25N90
- IXFR26N120P
- IXFR26N50Q
- IXFR27N80Q
- IXFR30N50
- IXFR30N60P
- IXFR32N100Q3
- IXFR32N50Q_04
- IXFR32N80Q3
- IXFR36N50P
- IXFR38N80Q2
- IXFR40N50Q2
- IXFR40N90P
- IXFR44N50Q
- IXFR44N50Q3
- IXFR44N80P
- IXFR48N60P
- IXFR4N100Q
- IXFR52N30Q
- IXFR55N50F
- IXFR58N20Q
- IXFR64N50Q3
- IXFR64N60Q3
- IXFR70N15
- IXFR80N10Q
- IXFR80N20Q
- IXFR90N30
- IXFT10N100
- IXFT120N15P
- IXFT12N100F
- IXFT12N50F
- IXFT13N100
相关库存
更多- IXFR16N120P
- IXFR180N06
- IXFR180N085
- IXFR180N15P
- IXFR18N90P
- IXFR200N10P_06
- IXFR20N120P
- IXFR21N100Q
- IXFR230N20T
- IXFR24N100_08
- IXFR24N50
- IXFR24N80P
- IXFR24N90Q
- IXFR26N100P
- IXFR26N50
- IXFR26N60Q
- IXFR30N110P
- IXFR30N50Q
- IXFR32N100P
- IXFR32N50Q
- IXFR32N80P
- IXFR34N80
- IXFR36N60P
- IXFR38N80Q2_08
- IXFR40N50Q2_08
- IXFR44N50P
- IXFR44N50Q_03
- IXFR44N60
- IXFR48N50Q
- IXFR48N60Q3
- IXFR50N50
- IXFR55N50
- IXFR58N20
- IXFR64N50P
- IXFR64N60P
- IXFR66N50Q2
- IXFR75N10Q
- IXFR80N15Q
- IXFR80N50P
- IXFR9N80Q
- IXFT10N100Q
- IXFT12N100
- IXFT12N100Q
- IXFT12N90Q
- IXFT13N80Q
