HIPERFET Power MOSFTETs

HiPerFETs The hIPerFET family of Power MOSFETs is designed to provice superior dv/dt, performance while eliminating the need for discrete, fase recovery free wheeling rectifiers In a board range of power switching applications.

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艾赛斯

PolarHV HiperFET Power MOSFET

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Features ◆ International standard packages ◆ Avalanche rated Advantages ◆ Easy to mount ◆ Space savings ◆ High power density Applications: ◆ Switched-mode and resonant-mode power supplies ◆ DC-DC Converters ◆ Laser Driver

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艾赛斯

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 14A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.55Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

文件：372.22 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 14A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.54Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

文件：372.94 Kbytes 页数：2 Pages

ISC

无锡固电

Power MOSFET

文件：338.44 Kbytes 页数：7 Pages

IXYS

艾赛斯

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier

文件：282.67 Kbytes 页数：6 Pages

IXYS

艾赛斯

N通道HiPerFET

• 国际标准包装\n• 动态dv/dt额定值\n• 雪崩评级\n• 快速本征整流器\n• 较低的QG和RDS(on)\n• 较低的漏极至弹片电容\n• 较低的封装电感;

Littelfuse

力特

N通道HiPerFET

• 超低通态电阻RDS(ON)和栅极电荷Qg\n• 快速体二极管\n• dv/dt强度\n• 雪崩评级\n• 较低的封装电感\n• 国际标准包装;

Littelfuse

力特