isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 120A@ TC=25℃ ·Drain Source Voltage -VDSS= 300V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 27mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive ·AC Motor Drives ·Battery Charges

文件：327.98 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode

Polar3™ HiPerFET™ Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Features • Dynamic dv/dt Rating • Avalanche Rated • Fast Intrinsic Diode • Low QG • Low RDS(on) • Low Drain-to-Tab Capacitance • Low Package Inductance Advantages • Easy to Mount • Space Savi

文件：132.75 Kbytes 页数：5 Pages

IXYS

艾赛斯

GigaMOS Power MOSFET

GigaMOS™ Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Features • International Standard Packages • High Current Handling Capability • Fast Intrinsic Diode • Avalanche Rated • Low RDS(on) Advantages • Easy to Mount • Space Savings • High Power Density A

文件：144.79 Kbytes 页数：5 Pages

IXYS

艾赛斯

N通道HiPerFET MOSFET

• 超低通态电阻RDS(ON)和栅极电荷Qg\n• 快速体二极管\n• dv/dt强度\n• 雪崩评级\n• 较低的封装电感\n• 国际标准包装;

Littelfuse

力特

N通道沟槽栅 Gen1 MOSFET

• 国际标准包装\n• 低RDS(ON)\n• 雪崩评级\n• 高电流处理能力\n• 快速本征整流器;

Littelfuse

力特