IXFX120N30

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=120A@TC=25℃ ·DrainSourceVoltage-VDSS=300V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=27mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive ·ACMotorDrives ·BatteryCharges

IXFX120N30P3

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode

Polar3™HiPerFET™PowerMOSFET N-ChannelEnhancementModeAvalancheRatedFastIntrinsicDiode Features •Dynamicdv/dtRating •AvalancheRated •FastIntrinsicDiode •LowQG •LowRDS(on) •LowDrain-to-TabCapacitance •LowPackageInductance Advantages •EasytoMount •SpaceSavi

IXFX120N30T

GigaMOS Power MOSFET

GigaMOS™PowerMOSFET N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features •InternationalStandardPackages •HighCurrentHandlingCapability •FastIntrinsicDiode •AvalancheRated •LowRDS(on) Advantages •EasytoMount •SpaceSavings •HighPowerDensity A

FGA120N30D

300VPDPIGBT

FGPF120N30

300V,120APDPIGBT

IXFH120N30

iscN-ChannelMOSFETTransistor

DESCRIPTION ·DrainCurrent:ID=120A@TC=25℃ ·DrainSourceVoltage :VDSS=300V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=25mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·motordrive,D

IXFK120N30T

GigaMOSPowerMOSFET

GigaMOS™PowerMOSFET N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features •InternationalStandardPackages •HighCurrentHandlingCapability •FastIntrinsicDiode •AvalancheRated •LowRDS(on) Advantages •EasytoMount •SpaceSavings •HighPowerDensity A

RM120N30DF

N-ChannelSuperTrenchPowerMOSFET