N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode

Polar3™ HiPerFET™ Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Features • Dynamic dv/dt Rating • Avalanche Rated • Fast Intrinsic Diode • Low QG • Low RDS(on) • Low Drain-to-Tab Capacitance • Low Package Inductance Advantages • Easy to Mount • Space Savi

文件：132.75 Kbytes 页数：5 Pages

IXYS

艾赛斯

N通道HiPerFET MOSFET

• 超低通态电阻RDS(ON)和栅极电荷Qg\n• 快速体二极管\n• dv/dt强度\n• 雪崩评级\n• 较低的封装电感\n• 国际标准包装;

Littelfuse

力特

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode

Polar3™ HiPerFET™ Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Features • Dynamic dv/dt Rating • Avalanche Rated • Fast Intrinsic Diode • Low QG • Low RDS(on) • Low Drain-to-Tab Capacitance • Low Package Inductance Advantages • Easy to Mount • Space Savi

文件：132.75 Kbytes 页数：5 Pages

IXYS

艾赛斯

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 120A@ TC=25℃ ·Drain Source Voltage- : VDSS= 300V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 27mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

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ISC

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