HIPERFET Power MOSFTETs

HiPerFETs The hIPerFET family of Power MOSFETs is designed to provice superior dv/dt, performance while eliminating the need for discrete, fase recovery free wheeling rectifiers In a board range of power switching applications.

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PolarHT??HiPerFET Power MOSFET

Features ● International standard packages ● Unclamped Inductive Switching (UIS) rated ● Low package inductance - easy to drive and to protect Advantages ● Easy to mount ● Space savings ● High power density

文件：109.83 Kbytes 页数：5 Pages

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N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 150A@ TC=25℃ · Drain Source Voltage -VDSS= 150V(Min) · Static Drain-Source On-Resistance -RDS(on) = 13mΩ(Max)@VGS= 10V APPLICATIONS · Switching · Converters

文件：346.68 Kbytes 页数：2 Pages

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无锡固电

N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 150A@ TC=25℃ · Drain Source Voltage -VDSS= 300V(Min) · Static Drain-Source On-Resistance -RDS(on) = 8.3mΩ(Max)@VGS= 10V APPLICATIONS · DC-DC Converters · PFC Circuits · AC and DC Motor Drives

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无锡固电

TrenchHV Power MOSFET HiperFET

文件：163.33 Kbytes 页数：5 Pages

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TrenchT2 HiperFET Power MOSFET

文件：186.8 Kbytes 页数：6 Pages

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N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier

文件：187.57 Kbytes 页数：6 Pages

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isc N-Channel MOSFET Transistor

文件：381.37 Kbytes 页数：2 Pages

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无锡固电

N-Channel Enhancement Mode Avalanche Rated

文件：259.06 Kbytes 页数：6 Pages

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N-Channel Enhancement Mode Avalanche Rated

文件：303.15 Kbytes 页数：6 Pages

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