首页 >IXFH14N100>规格书列表

型号下载 订购功能描述制造商 上传企业LOGO

IXFH14N100

HiPerFET Power MOSFETs

Features ● International standard packages ● Low RDS (on) HDMOSTM process ● Rugged polysilicon gate cell structure ● Unclamped Inductive Switching (UIS) rated ● Low package inductance - easy to drive and to protect ● Fast intrinsic Rectifier Applications ● DC-DC converters ● Battery c

文件:116.65 Kbytes 页数:4 Pages

IXYS

艾赛斯

IXFH14N100

N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family

Features ● International standard packages ● Low RDS (on) HDMOSTM process ● Rugged polysilicon gate cell structure ● Unclamped Inductive Switching (UIS) rated ● Low package inductance - easy to drive and to protect ● Fast intrinsic Rectifier Applications ● DC-DC converters ● Battery c

文件:628.09 Kbytes 页数:4 Pages

IXYS

艾赛斯

IXFH14N100

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 14A@ TC=25℃ ·Drain Source Voltage : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.75Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC

文件:372.47 Kbytes 页数:2 Pages

ISC

无锡固电

IXFH14N100

N-Channel: Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)

·The IXYS most popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering Low gate charge and excellent ruggedness with a fast intrinsic diode. Available in many standard industrial packages including isolated types;

Littelfuse

力特

IXFH14N100Q2

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 14A@ TC=25℃ ·Drain Source Voltage : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.9Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

文件:372.73 Kbytes 页数:2 Pages

ISC

无锡固电

IXFH14N100Q2

N-Channel Enhancement Mode Avalanche Rated, Low Qg Low Rg, High dv/dt, Low trr

文件:564.85 Kbytes 页数:4 Pages

IXYS

艾赛斯

IXFH14N100Q2_08

HiPerFET Power MOSFETs Q2-Class

文件:146.77 Kbytes 页数:4 Pages

IXYS

艾赛斯

IXFH14N100Q2

N通道HiPerFET

• 国际标准包装\n• 雪崩能量和电流额定值\n• 较低的封装电感;

Littelfuse

力特

IXFH14N100Q

MOSFET N-CH 1000V 14A TO247AD

Littelfuse

力特

技术参数

  • Maximum On-Resistance @ 25 ℃ (Ohm):

    0.95

  • Continuous Drain Current @ 25 ℃ (A):

    14

  • Gate Charge (nC):

    83

  • Thermal resistance [junction-case](K/W):

    0.25

  • Configuration:

    Single

  • Package Type:

    TO-247

  • Power Dissipation (W):

    500

  • Maximum Reverse Recovery (ns):

    300

  • Sample Request:

    No

供应商型号品牌批号封装库存备注价格
IXYS
18+
IXYS
85600
保证进口原装可开17%增值税发票
询价
IXYS
20+
TO-247
36900
原装优势主营型号-可开原型号增税票
询价
IXYS
25+
TO-247
3000
就找我吧!--邀您体验愉快问购元件!
询价
IXYS/艾赛斯
23+
TO-247
50000
全新原装正品现货,支持订货
询价
IXYS
22+
TO2473
9000
原厂渠道,现货配单
询价
IXYS/艾赛斯
23+
TO-3P
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
IXYS
2022+
TO-247-3
38550
全新原装 支持表配单 中国著名电子元器件独立分销
询价
IXYS
23+
TO-247
89630
当天发货全新原装现货
询价
IXYS
25+
TO-247
12300
独立分销商 公司只做原装 诚心经营 免费试样正品保证
询价
IXYS/艾赛斯
24+
TO-247
60000
询价
更多IXFH14N100供应商 更新时间2026-2-2 15:32:00