HiPerFET Power MOSFETs Q-Class

HiPerFET Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Gate Charge and Capacitances Features • IXYS advanced low gate charge process • International standard packages • Low gate charge and capacitance - easier to drive - faster switching • Low RDS

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IXYS

艾赛斯

N-Channel: Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)

·The IXYS most popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering Low gate charge and excellent ruggedness with a fast intrinsic diode. Available in many standard industrial packages including isolated types;

Littelfuse

力特

HiPerFASTTM IGBT

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IXYS

艾赛斯

Low VCE(sat) IGBT, High speed IGBT

Low VCE(sat) IGBT High speed IGBT Features l International standard packages l 2nd generation HDMOSTM process l Low VCE(sat) - for low on-state conduction losses l High current handling capability l MOS Gate turn-on - drive simplicity l Voltage rating guaranteed at

文件：64.36 Kbytes 页数：2 Pages

IXYS

艾赛斯

Low VCE(sat) IGBT, High speed IGBT

Low VCE(sat) IGBT High speed IGBT Features l International standard packages l 2nd generation HDMOSTM process l Low VCE(sat) - for low on-state conduction losses l High current handling capability l MOS Gate turn-on - drive simplicity l Voltage rating guaranteed at

文件：64.36 Kbytes 页数：2 Pages

IXYS

艾赛斯