PT IGBTs

·VCES: 300V to 1200V \n·IC(90): 2A to 200A \n·High Gain, Low conduction & switching losses. Classes:A2,A3,B2,B3,C2\n and C3 ·A2: DC to 10kHz. B2,B3: 15kHz to 40kHz C2: 40kHz to 100kHz \n C3: 50kHz -150kHz.·A3-Class Polar IGBT/Diode Types, Mid-Frequency Range (15KHz-40KHz)\n C3-300 V IGBT, ;

Littelfuse

力特

HiPerFASTTM IGBT

文件：85.86 Kbytes 页数：4 Pages

IXYS

艾赛斯

Low VCE(sat) IGBT, High speed IGBT

Low VCE(sat) IGBT High speed IGBT Features l International standard packages l 2nd generation HDMOSTM process l Low VCE(sat) - for low on-state conduction losses l High current handling capability l MOS Gate turn-on - drive simplicity l Voltage rating guaranteed at

文件：64.36 Kbytes 页数：2 Pages

IXYS

艾赛斯

Low VCE(sat) IGBT, High speed IGBT

Low VCE(sat) IGBT High speed IGBT Features l International standard packages l 2nd generation HDMOSTM process l Low VCE(sat) - for low on-state conduction losses l High current handling capability l MOS Gate turn-on - drive simplicity l Voltage rating guaranteed at

文件：64.36 Kbytes 页数：2 Pages

IXYS

艾赛斯

HiPerFAST IGBT

VCES = 600 V IC25 = 40 A VCE(sat)typ = 1.7 V tfi(typ) = 100 ns Features • International standard packages JEDEC TO-268 surface mountable and JEDEC TO-247 AD • High current handling capability • Latest generation HDMOSTM process • MOS Gate turn-on - drive simplicity

文件：114.65 Kbytes 页数：4 Pages

IXYS

艾赛斯