PT IGBTs

·VCES: 300V to 1200V \n·IC(90): 2A to 200A \n·High Gain, Low conduction & switching losses. Classes:A2,A3,B2,B3,C2\n and C3 ·A2: DC to 10kHz. B2,B3: 15kHz to 40kHz C2: 40kHz to 100kHz \n C3: 50kHz -150kHz.·A3-Class Polar IGBT/Diode Types, Mid-Frequency Range (15KHz-40KHz)\n C3-300 V IGBT, ;

Littelfuse

力特

ADVANCED TECHNICAL INFORMATION

Features • International standard packages JEDEC TO-220AB and TO-263AA • High current handling capability • MOS Gate turn-on - drive simplicity Applications • AC motor speed control • DC servo and robot drives • DC choppers • Uninterruptible power supplies (UPS) • Switch-mode and res

文件：107.39 Kbytes 页数：2 Pages

IXYS

艾赛斯

Package：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 1000V 8A 40W TO263AA

IXYS

艾赛斯

ADVANCED TECHNICAL INFORMATION

Features • International standard packages JEDEC TO-220AB and TO-263AA • High current handling capability • MOS Gate turn-on - drive simplicity Applications • AC motor speed control • DC servo and robot drives • DC choppers • Uninterruptible power supplies (UPS) • Switch-mode and res

文件：107.39 Kbytes 页数：2 Pages

IXYS

艾赛斯

4.3A, 1000V, 3.500 Ohm, High Voltage, N-Channel Power MOSFETs

The RFP4N100 and RFP4N100SM are N-Channel enhancement mode silicon gate power field effect transistors. They are designed for use in applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring hig

文件：45.99 Kbytes 页数：6 Pages

INTERSIL

4.3A, 1000V, 3.500 Ohm, High Voltage, N-Channel Power MOSFETs

The RFP4N100 and RFP4N100SM are N-Channel enhancement mode silicon gate power field effect transistors. They are designed for use in applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring hig

文件：101.12 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司