| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
IXGA4N100 | ADVANCED TECHNICAL INFORMATION Features •InternationalstandardpackagesJEDECTO-220ABandTO-263AA •Highcurrenthandlingcapability •MOSGateturn-on -drivesimplicity Applications •ACmotorspeedcontrol •DCservoandrobotdrives •DCchoppers •Uninterruptiblepowersupplies(UPS) •Switch-modeandres | IXYS IXYS Integrated Circuits Division | IXYS | |
IXGA4N100 | 包装：管件 封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 1000V 8A 40W TO263AA | IXYS IXYS Integrated Circuits Division | IXYS | |
null4.0A,1000VN-CHANNELPOWERMOSFET DESCRIPTION TheUTC4N100-FCprovideexcellentRDS(ON),lowgate chargeandoperationwithlowgatevoltages.Thisdevice suitableforuseasaloadswitchorinPWMapplications. FEATURES0 *RDS(ON)≤6.0Ω@VGS=10V,ID=2.0A *LowReverseTransferCapacitance *FastSwitchingCapabi | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | UTC | ||
N-ChannelEnhancementModeMOSFET | DACO DACO | DACO | ||
PowerMOSFET | IXYS IXYS Integrated Circuits Division | IXYS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=4A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=3.3Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
PolarHiPerFETPowerMOSFET | IXYS IXYS Integrated Circuits Division | IXYS | ||
HiPerFETPowerMOSFETsQ-Class HiPerFET™PowerMOSFETsQ-Class N-ChannelEnhancementModeAvalancheRated,LowQg,Highdv/dt Features •IXYSadvancedlowQ g process •Lowgatechargeandcapacitances -easiertodrive -fasterswitching •Internationalstandardpackages •LowRDS(on) •Ratedforunclamped | IXYS IXYS Integrated Circuits Division | IXYS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=4A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=3Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
HiPerFETPowerMOSFETsQ-Class Features •IXYSadvancedlowQgprocess •Lowgatechargeandcapacitances -easiertodrive -fasterswitching •Internationalstandardpackages •LowRDS(on) •UnclampedInductiveSwitching(UIS)rated •MoldingepoxiesmeetUL94V-0flammabilityclassification Advantages •Eas | IXYS IXYS Integrated Circuits Division | IXYS | ||
HiPerFETPowerMOSFETsQ-Class Features •IXYSadvancedlowQgprocess •Lowgatechargeandcapacitances -easiertodrive -fasterswitching •Internationalstandardpackages •LowRDS(on) •UnclampedInductiveSwitching(UIS)rated •MoldingepoxiesmeetUL94V-0flammabilityclassification Advantages •Eas | IXYS IXYS Integrated Circuits Division | IXYS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=4A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=3.0Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=4A@TC=25℃ ·DrainSourceVoltage-VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3.3Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andPFCCircuits.. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
PowerMOSFET | IXYS IXYS Integrated Circuits Division | IXYS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=4.0A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=3.3Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
PolarHiPerFETPowerMOSFET | IXYS IXYS Integrated Circuits Division | IXYS | ||
PolarHiperFETPowerMOSFET | IXYS IXYS Integrated Circuits Division | IXYS | ||
HiperFETPowerMOSFETsQ-Class | IXYS IXYS Integrated Circuits Division | IXYS | ||
HiPerFETPowerMOSFETsQ-Class HiPerFET™PowerMOSFETsQ-Class N-ChannelEnhancementModeAvalancheRated,LowQg,Highdv/dt Features •IXYSadvancedlowQ g process •Lowgatechargeandcapacitances -easiertodrive -fasterswitching •Internationalstandardpackages •LowRDS(on) •Ratedforunclamped | IXYS IXYS Integrated Circuits Division | IXYS | ||
HiPerFETPowerMOSFETQ-Class | IXYS IXYS Integrated Circuits Division | IXYS |
产品属性
- 产品编号：
IXGA4N100
- 制造商：
IXYS
- 类别：
分立半导体产品 > 晶体管 - UGBT、MOSFET - 单
- 包装：
管件
- 不同 Vge、Ic 时 Vce(on)（最大值）：
2.7V @ 15V，4A
- 开关能量：
900µJ（关）
- 输入类型：
标准
- 25°C 时 Td（开/关）值：
20ns/390ns
- 测试条件：
800V，4A，120 欧姆，15V
- 工作温度：
-55°C ~ 150°C（TJ）
- 安装类型：
表面贴装型
- 封装/外壳：
TO-263-3，D²Pak（2 引线 + 接片），TO-263AB
- 供应商器件封装：
TO-263AA
- 描述：
IGBT 1000V 8A 40W TO263AA
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IXYS |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 | ||
IXYS |
1931+ |
N/A |
18 |
加我qq或微信，了解更多详细信息,体验一站式购物 |
询价 | ||
IXYS |
1809+ |
TO-263 |
326 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
IXYS |
22+ |
NA |
18 |
加我QQ或微信咨询更多详细信息, |
询价 | ||
IXYS |
22+ |
TO263 (IXGA) |
9000 |
原厂渠道,现货配单 |
询价 | ||
IXYS |
21+ |
TO263 (IXGA) |
13880 |
公司只售原装,支持实单 |
询价 | ||
IXYS |
23+ |
TO263 (IXGA) |
9000 |
原装正品，支持实单 |
询价 | ||
IXYS |
2022+ |
TO-263(IXGA) |
38550 |
全新原装 支持表配单 中国著名电子元器件独立分销 |
询价 | ||
IXYS-艾赛斯 |
24+25+/26+27+ |
TO-263-3 |
6328 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 | ||
IXYS |
24+ |
TO-263-3,D?Pak(2 引线 + 接片 |
9350 |
独立分销商,公司只做原装,诚心经营,免费试样正品保证 |
询价 |
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