Package：TO-247-3；包装：盒 类别：分立半导体产品 晶体管 - FET，MOSFET - 单个 描述：MOSFET N-CH 300V ISOPLUS247

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N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t Low Gate Charge and Capacitances

N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Low Gate Charge and Capacitances Features • Low gate charge • International standard packages • EpoxymeetUL94V-0, flammability classification • Low RDS (on) HDMOS™ process • Rugged polysilicon gate cell structure • Avalanche

文件：70.63 Kbytes 页数：2 Pages

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PolarHT Power MOSFET HiPerFET

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Features • International standard packages • Fast recovery diode • Avalanche rated • Low package inductance - easy to drive and to protect Advantages • Easy to mount • Space savings • High power density

文件：190.5 Kbytes 页数：5 Pages

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Power MOSFETs

文件：195.18 Kbytes 页数：6 Pages

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