IXFT30N50Q3

HiperFETTM Power MOSFETs Q3-Class

N-ChannelEnhancementModeAvalancheRatedFastIntrinsicRectifier Features •LowIntrinsicGateResistance •InternationalStandardPackages •LowPackageInductance •FastIntrinsicRectifier •LowRDS(on)andQG Advantages •HighPowerDensity •EasytoMount •SpaceSavings Applica

IXFV30N50P

PolarHVHiPerFETPowerMOSFET

N-ChannelEnhancementModeAvalancheRatedFastIntrinsicDiode Features •Internationalstandardpackages •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance-easytodriveandtoprotect Advantages •Easytomount •Spacesavings •Highpowerdensity

IXFV30N50PS

PolarHVHiPerFETPowerMOSFET

N-ChannelEnhancementModeAvalancheRatedFastIntrinsicDiode Features •Internationalstandardpackages •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance-easytodriveandtoprotect Advantages •Easytomount •Spacesavings •Highpowerdensity

IXFX30N50

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=30A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.16Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconv

IXFX30N50Q

HiPerFETPowerMOSFETsQ-Class

N-ChannelEnhancementMode AvalancheRated,LowQg,Highdv/dt Features ●IXYSadvancedlowQgprocess ●Lowgatechargeandcapacitances -easiertodrive -fasterswitching ●Internationalstandardpackages ●LowRDS(on) ●UnclampedInductiveSwitching(UIS)rated ●Moldingepox

IXTH30N50

iscN-ChannelMOSFETTransistor

IXTH30N50

MegaMOSFET

MegaMOS™FET N-ChannelEnhancementMode Features •InternationalstandardpackageJEDECTO-247AD •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •Highcommutatingdv/dtrating •Fastswitchingtimes Applications •Switch-modeandresonant-modepowersupplies •M

IXTH30N50L

iscN-ChannelMOSFETTransistor

•FEATURES •WithTO-247packaging •Withlowgatedriverequirements •Lowswitchingloss •Lowon-stateresistance •Easytodrive •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation •APPLICATIONS •Switchingapplications

IXTH30N50L

N-ChannelEnhancementMode

N-ChannelEnhancementMode Features ●Designedforlinearoperation ●Internationalstandardpackages ●UnclampedInductiveSwitching(UIS)rated. ●MoldingepoxiesmeetUL94V-0flammabilityclassification ●Integratedgateresistorforeasyparalleling ●GuaranteedFBSOAat75°C Applica

IXTH30N50P

iscN-ChannelMOSFETTransistor