| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t Low Gate Charge and Capacitances N-ChannelEnhancementMode AvalancheRated,Highdv/dt,Lowtrr LowGateChargeandCapacitances Features •Lowgatecharge •Internationalstandardpackages •EpoxymeetUL94V-0,flammabilityclassification •LowRDS(on)HDMOS™process •Ruggedpolysilicongatecellstructure •Avalanche | IXYS IXYS Integrated Circuits Division | IXYS | ||
PolarHTTMHiPerFETPowerMOSFET | IXYS IXYS Integrated Circuits Division | IXYS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=32A@TC=25℃ ·DrainSourceVoltage :VDSS=300V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=75mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
PowerMOSFETs | IXYS IXYS Integrated Circuits Division | IXYS | ||
PolarHTPowerMOSFETHiPerFET N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features •Internationalstandardpackages •Fastrecoverydiode •Avalancherated •Lowpackageinductance -easytodriveandtoprotect Advantages •Easytomount •Spacesavings •Highpowerdensity | IXYS IXYS Integrated Circuits Division | IXYS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=52A@TC=25℃ ·DrainSourceVoltage- :VDSS=300V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=73mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=52A@TC=25℃ ·DrainSourceVoltage- :VDSS=300V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=60mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelEnhancementModeAvalancheRated,Highdv/dt,LowtLowGateChargeandCapacitances N-ChannelEnhancementMode AvalancheRated,Highdv/dt,Lowtrr LowGateChargeandCapacitances Features •Lowgatecharge •Internationalstandardpackages •EpoxymeetUL94V-0,flammabilityclassification •LowRDS(on)HDMOS™process •Ruggedpolysilicongatecellstructure •Avalanche | IXYS IXYS Integrated Circuits Division | IXYS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=52A@TC=25℃ ·DrainSourceVoltage- :VDSS=300V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.06Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelEnhancementModeAvalancheRated,Highdv/dt,LowtLowGateChargeandCapacitances N-ChannelEnhancementMode AvalancheRated,Highdv/dt,Lowtrr LowGateChargeandCapacitances Features •Lowgatecharge •Internationalstandardpackages •EpoxymeetUL94V-0,flammabilityclassification •LowRDS(on)HDMOS™process •Ruggedpolysilicongatecellstructure •Avalanche | IXYS IXYS Integrated Circuits Division | IXYS | ||
PolarHTPowerMOSFETHiPerFET N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features •Internationalstandardpackages •Fastrecoverydiode •Avalancherated •Lowpackageinductance -easytodriveandtoprotect Advantages •Easytomount •Spacesavings •Highpowerdensity | IXYS IXYS Integrated Circuits Division | IXYS | ||
PowerMOSFETs | IXYS IXYS Integrated Circuits Division | IXYS | ||
PowerMOSFETs | IXYS IXYS Integrated Circuits Division | IXYS | ||
PolarHTPowerMOSFETHiPerFET N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features •Internationalstandardpackages •Fastrecoverydiode •Avalancherated •Lowpackageinductance -easytodriveandtoprotect Advantages •Easytomount •Spacesavings •Highpowerdensity | IXYS IXYS Integrated Circuits Division | IXYS | ||
PolarHTPowerMOSFET Polar™PowerMOSFETs N-ChannelEnhancementMode AvalancheRated Features •FastIntrinsicRectifier •AvalancheRated •LowRDS(ON)andQG •LowPackageInductance Advantages •HighPowerDensity •EasytoMount •SpaceSavings Applications •Switch-ModeandResonant-ModePowerSuppli | IXYS IXYS Integrated Circuits Division | IXYS | ||
N-ChannelEnhancementModePowerMOSFETs | IXYS IXYS Integrated Circuits Division | IXYS | ||
iscN-ChannelMOSFETTransistor •FEATURES •DrainSourceVoltage-:VDSS=300V(Min) •StaticDrain-SourceOn-Resistance:RDS(on)=66mΩ(Max) •FastSwitching •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation •APPLICATIONS •Switch-ModeandResonant-ModePowerS | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelEnhancementModePowerMOSFETs | IXYS IXYS Integrated Circuits Division | IXYS | ||
PolarHTPowerMOSFET Polar™PowerMOSFETs N-ChannelEnhancementMode AvalancheRated Features •FastIntrinsicRectifier •AvalancheRated •LowRDS(ON)andQG •LowPackageInductance Advantages •HighPowerDensity •EasytoMount •SpaceSavings Applications •Switch-ModeandResonant-ModePowerSuppli | IXYS IXYS Integrated Circuits Division | IXYS |
详细参数
- 型号：
IXFT52N30
- 功能描述：
MOSFET 300V 52A
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IXYS/艾赛斯 |
23+ |
TO-268S |
56230 |
原装正品 华强现货 |
询价 | ||
IXYS |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 | ||
IXYS |
1931+ |
N/A |
18 |
加我qq或微信，了解更多详细信息,体验一站式购物 |
询价 | ||
IXYS |
1809+ |
TO-268 |
326 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
IXYS/艾赛斯 |
TO247 |
265209 |
假一罚十原包原标签常备现货! |
询价 | |||
IXYS/艾赛斯 |
23+ |
TO-268 |
10000 |
公司只做原装正品 |
询价 | ||
IXYS/艾赛斯 |
23+ |
TO247 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
IXYS |
22+ |
NA |
18 |
加我QQ或微信咨询更多详细信息, |
询价 | ||
IXYS/艾赛斯 |
21+ |
TO247 |
10000 |
原装现货假一罚十 |
询价 | ||
IXYS |
22+ |
TO2683 D3Pak (2 Leads + Tab) T |
9000 |
原厂渠道,现货配单 |
询价 |
相关规格书
更多- IXFT52N50P2
- IXFT58N20Q
- IXFT60N20F
- IXFT60N50P3
- IXFT68N20
- IXFT6N100F
- IXFT70N15
- IXFT70N30Q3
- IXFT75N10Q
- IXFT80N08
- IXFT80N10
- IXFT80N15Q
- IXFT80N30P3
- IXFT88N28P
- IXFT94N30P3
- IXFT96N20P
- IXFTN100
- IXFV10N100PS
- IXFV110N10PS
- IXFV110N25TS
- IXFV12N100PS
- IXFV12N120PS
- IXFV12N80PS
- IXFV12N90PS
- IXFV14N80PS
- IXFV15N100PS
- IXFV16N80PS
- IXFV18N60PS
- IXFV18N90PS
- IXFV20N80PS
- IXFV22N50PS
- IXFV22N60PS
- IXFV26N50PS
- IXFV26N60PS
- IXFV30N50PS
- IXFV30N60PS
- IXFV36N50PS
- IXFV52N30PS
- IXFV74N20PS
- IXFV96N15PS
- IXFX100N25
- IXFX120N25
- IXFX120N30P3
- IXFX12N90Q
- IXFX140N30P
相关库存
更多- IXFT58N20
- IXFT60N20
- IXFT60N25Q
- IXFT66N20Q
- IXFT69N30P
- IXFT6N100Q
- IXFT70N20Q3
- IXFT74N20
- IXFT7N90Q
- IXFT80N085
- IXFT80N10Q
- IXFT80N20Q
- IXFT86N30T
- IXFT88N30P
- IXFT94N30T
- IXFT9N80Q
- IXFV10N100P
- IXFV110N10P
- IXFV110N25T
- IXFV12N100P
- IXFV12N120P
- IXFV12N80P
- IXFV12N90P
- IXFV14N80P
- IXFV15N100P
- IXFV16N80P
- IXFV18N60P
- IXFV18N90P
- IXFV20N80P
- IXFV22N50P
- IXFV22N60P
- IXFV26N50P
- IXFV26N60P
- IXFV30N50P
- IXFV30N60P
- IXFV36N50P
- IXFV52N30P
- IXFV74N20P
- IXFV96N15P
- IXFV96N20P
- IXFX120N20
- IXFX120N25P
- IXFX120N30T
- IXFX140N25T
- IXFX14N100
