N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t Low Gate Charge and Capacitances

N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Low Gate Charge and Capacitances Features • Low gate charge • International standard packages • EpoxymeetUL94V-0, flammability classification • Low RDS (on) HDMOS™ process • Rugged polysilicon gate cell structure • Avalanche

文件：70.63 Kbytes 页数：2 Pages

IXYS

艾赛斯

N通道HiPerFET

• 国际标准包装\n• 坚固的多晶硅栅极单元结构\n• 适用于非钳位感应开关（UIS）\n• 快速本征整流器;

Littelfuse

力特

PolarHT Power MOSFET HiPerFET

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Features • International standard packages • Fast recovery diode • Avalanche rated • Low package inductance - easy to drive and to protect Advantages • Easy to mount • Space savings • High power density

文件：190.5 Kbytes 页数：5 Pages

IXYS

艾赛斯

Power MOSFETs

文件：195.18 Kbytes 页数：6 Pages

IXYS

艾赛斯

PolarHT Power MOSFET HiPerFET

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Features • International standard packages • Fast recovery diode • Avalanche rated • Low package inductance - easy to drive and to protect Advantages • Easy to mount • Space savings • High power density

文件：190.5 Kbytes 页数：5 Pages

IXYS

艾赛斯