HiPerFET Power MOSFET Q2-Class

HiPerFET™ Power MOSFET Q2-Class N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Low intrinsic Rg, low trr Features • Double Metal Process for Low Gate Resistance • International Standard Package • Epoxy Meet UL 94 V-0, Flammability Classification • Low Rds(on), Low Qg • Ava

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IXYS

艾赛斯

N通道HiPerFET

• 国际标准包装\n• 双金属工艺带来较低的栅极电阻\n• 雪崩能量和电流额定值\n• 快速本征整流器\n• 较低的封装电感;

Littelfuse

力特

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 14A@ TC=25℃ ·Drain Source Voltage : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.9Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

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ISC

无锡固电

N-Channel Enhancement Mode Avalanche Rated, Low Qg Low Rg, High dv/dt, Low trr

文件：564.85 Kbytes 页数：4 Pages

IXYS

艾赛斯