HiPerFET Power MOSFETs ISOPLUS247

HiPerFET™ Power MOSFETs ISOPLUS247™ F-Class: MegaHertz Switching (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances Features • RF capable MOSFETs • Double metal process for low gate resistance • Unclamped Inductive Sw

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N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances

HiPerFET™ Power MOSFETs ISOPLUS247™ Q CLASS (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances Features ● Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface

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HiPerFET Power MOSFETs ISOPLUS247 Q CLASS

HiPerFET™ Power MOSFETs ISOPLUS247™ Q CLASS (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances Features ● Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface

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N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family

Features • International standard package • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect • Fast intrinsic Rectifier Applications • DC-DC converters • Synchronou

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