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IXFR25N90

包装:管件 封装/外壳:TO-247-3 类别:分立半导体产品 晶体管 - FET,MOSFET - 单个 描述:MOSFET N-CH 900V 25A ISOPLUS247

IXYS

IXYS Integrated Circuits Division

25N90

HiPerFETPowerMOSFETs

HiPerFET™PowerMOSFETs SingleMOSFETDie Features •Internationalstandardpackages •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandtoprotect •Fastintrinsicrectifier Appl

IXYS

IXYS Integrated Circuits Division

IXFK25N90

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=25A@TC=25℃ ·DrainSourceVoltage- :VDSS=900V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.3Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXFK25N90

HiPerFETPowerMOSFETs

HiPerFET™PowerMOSFETs SingleMOSFETDie Features •Internationalstandardpackages •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandtoprotect •Fastintrinsicrectifier Appl

IXYS

IXYS Integrated Circuits Division

IXFN25N90

HiPerFETPowerMOSFETsSingleDieMOSFET

N-ChannelEnhancementModeAvalancheRated,Highdv/dt,LowtrrFastIntrinsicDiode Features ●Internationalstandardpackage ●miniBLOC,withAluminiumnitrideisolation ●LowRDS(ON)HDMOSTMprocess ●AvalancheRated ●Lowpackageinductance ●Fastintrinsicdiode Advantages ●Lowgate

IXYS

IXYS Integrated Circuits Division

IXFN25N90

HiPerFETPowerMOSFETsSingleDieMOSFET

N-ChannelEnhancementModeAvalancheRated,Highdv/dt,LowtrrFastIntrinsicDiode Features ●Internationalstandardpackage ●miniBLOC,withAluminiumnitrideisolation ●LowRDS(ON)HDMOSTMprocess ●AvalancheRated ●Lowpackageinductance ●Fastintrinsicdiode Advantages ●Lowgate

IXYS

IXYS Integrated Circuits Division

IXFN-25N90

HiPerFETTMPowerMOSFETsSingleDieMOSFET

IXYS

IXYS Integrated Circuits Division

IXFX25N90

HiPerFETPowerMOSFETs

HiPerFET™PowerMOSFETs SingleMOSFETDie Features •Internationalstandardpackages •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandtoprotect •Fastintrinsicrectifier Appl

IXYS

IXYS Integrated Circuits Division

IXFX25N90

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=25A@TC=25℃ ·DrainSourceVoltage- :VDSS=900V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.33Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

产品属性

  • 产品编号:

    IXFR25N90

  • 制造商:

    IXYS

  • 类别:

    分立半导体产品 > 晶体管 - FET,MOSFET - 单个

  • 包装:

    管件

  • FET 类型:

    N 通道

  • 技术:

    MOSFET(金属氧化物)

  • 25°C 时电流 - 连续漏极 (Id):

    25A(Tc)

  • 安装类型:

    通孔

  • 供应商器件封装:

    ISOPLUS247™

  • 封装/外壳:

    TO-247-3

  • 描述:

    MOSFET N-CH 900V 25A ISOPLUS247

供应商型号品牌批号封装库存备注价格
IXYS
1931+
N/A
18
加我qq或微信,了解更多详细信息,体验一站式购物
询价
IXYS
1809+
TO-247
326
就找我吧!--邀您体验愉快问购元件!
询价
IXYS
1923+
TO-247
6896
原装进口现货库存专业工厂研究所配单供货
询价
IXYS
22+
NA
18
加我QQ或微信咨询更多详细信息,
询价
IXYS
22+
ISOPLUS247?
9000
原厂渠道,现货配单
询价
IXYS
21+
ISOPLUS247?
13880
公司只售原装,支持实单
询价
IXYS
23+
ISOPLUS247?
9000
原装正品,支持实单
询价
IXYS
2022+
ISOPLUS247?
38550
全新原装 支持表配单 中国著名电子元器件独立分销
询价
IXYS-艾赛斯
24+25+/26+27+
TO-247-3
2368
一一有问必回一特殊渠道一有长期订货一备货HK仓库
询价
IXYS
23+24
TO-247
29840
主营MOS管,二极.三极管,肖特基二极管.功率三极管
询价
更多IXFR25N90供应商 更新时间2024-5-29 10:18:00