HiPerFET Power MOSFETs ISOPLUS247 (Electrically Isolated Back Surface)

(Electrically Isolated Back Surface) N-Channel Enhancement Mode High dV/dt, Low trr, HDMOS™ Family Features Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation
Low drain to tab capacitance(

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IXYS

艾赛斯

N-Channel: Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)

·The IXYS most popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering Low gate charge and excellent ruggedness with a fast intrinsic diode. Available in many standard industrial packages including isolated types;

Littelfuse

力特

HiPerFET Power MOSFETs

HiPerFETs The hIPerFET family of Power MOSFETs is designed to provice superior dv/dt, performance while eliminating the need for discrete, fase recovery free wheeling rectifiers In a board range of power switching applications.

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IXYS

艾赛斯

HiPerFET Power MOSFETs

N-Channel Enhancement Mode Avalanche Rated, Low Qg ,High dv/dt Features IXYS advanced low Qg process International standard packages Low RDS (on) Unclamped Inductive Switching (UIS) rated Fast switching Molding epoxies meet UL 94 V-0 flammability classification

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IXYS

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Avalanche Rated Fast Instrinsic Diode

VDSS = 500 V ID25 = 26 A RDS(on) ≤ 230 mΩ trr ≤ 200 ns Avalanche Rated Fast Instrinsic Diode Features ● International standard packages ● Fast intrinsic diode ● Unclamped Inductive Switching (UIS) rated ● Low package inductance - easy to drive and to protect Advantages ● Easy to mou

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IXYS

艾赛斯