MOSFET N-CH 500V 24A TO-3P

Littelfuse

力特

Package：TO-3P-3，SC-65-3；包装：盒 类别：分立半导体产品 晶体管 - FET，MOSFET - 单个 描述：MOSFET N-CH 500V 24A TO3P

IXYS

艾赛斯

HiPerFET Power MOSFETs ISOPLUS247 (Electrically Isolated Back Surface)

(Electrically Isolated Back Surface) N-Channel Enhancement Mode High dV/dt, Low trr, HDMOS™ Family Features • Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation • Low drain to tab capacitance(

文件：34.31 Kbytes 页数：2 Pages

IXYS

艾赛斯

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 24A@ TC=25℃ ·Drain Source Voltage -VDSS= 500V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 250mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：330.29 Kbytes 页数：2 Pages

ISC

无锡固电

HiPerFET Power MOSFETs ISOPLUS247 (Electrically Isolated Back Surface)

(Electrically Isolated Back Surface) N-Channel Enhancement Mode High dV/dt, Low trr, HDMOS™ Family Features Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation
Low drain to tab capacitance(

文件：79.56 Kbytes 页数：2 Pages

IXYS

艾赛斯