HiPerFET Power MOSFETs Q-Class

N-Channel Enhancement Mode Avalanche Rated, Low Qg , High dv/dt Features •IXYS advanced low Qg process •Low gate charge and capacitances - easier to drive -faster switching •Unclamped Inductive Switching (UIS) rated •Low RDS (on) •Fast intrinsic diode •International st

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IXYS

艾赛斯

N-Channel MOSFET

DESCRIPTION · Drain Current -ID= 48A@ TC=25℃ · Drain Source Voltage -VDSS= 500V(Min) · Static Drain-Source On-Resistance -RDS(on) = 100mΩ(Max)@VGS= 10V APPLICATIONS · DC-DC converter · Battery Chargers · High speed power switch

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ISC

无锡固电

HiPerFET Power MOSFETs Q-Class

文件：572.32 Kbytes 页数：4 Pages

IXYS

艾赛斯

N通道HiPerFET

• 国际标准包装\n• 坚固的多晶硅栅极单元结构\n• 适用于非钳位感应开关（UIS）\n• 快速本征整流器;

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力特