IRF237

8.1A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel Power MOSFETs

Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplica

IRF-24

Inductors Epoxy Conformal Coated, Axial Leaded

FEATURES •Highperformanceferritecoreisusedinthisepoxyconformallycoatedchokewhichallowsforinductancevaluesto1000µH •Axialleadtype,smalllightweightdesign •SpecialmagneticcorestructurecontributestohighQandself-resonantfrequencies •Treatedwithepoxyr

IRF-24

Inductors, Epoxy Conformal Coated, Axial Leaded

FEATURES •Highperformanceferritecoreisusedinthis epoxyconformallycoatedchokewhichallows forinductancevaluesto1000μH •Axialleadtype,smalllightweightdesign •Specialmagneticcorestructurecontributesto highQandself-resonantfrequencies •Treatedwithepoxyresin

IRF-24_V01

Inductors, Epoxy Conformal Coated, Axial Leaded

FEATURES •Highperformanceferritecoreisusedinthis epoxyconformallycoatedchokewhichallows forinductancevaluesto1000μH •Axialleadtype,smalllightweightdesign •Specialmagneticcorestructurecontributesto highQandself-resonantfrequencies •Treatedwithepoxyresin

IRF240

N-CHANNEL POWER MOSFET

FEATURES •LowRDs

IRF240

Static Drain-Source On-Resistance

DESCRIPTION ·DrainCurrentID=18A@TC=25℃ ·DrainSourceVoltage-:VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance:RDS(on)=0.18Ω(Max) APPLICATIONS ·Switchingpowersupplies ·Switchingconverters,motordriver,relaydriver ·Audioamplifierandservomotors

IRF240

REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE

PartNumberBVDSSRDS(on)ID IRF240200V0.18Ω18A TheHEXFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-sta

IRF240

N-Channel Power MOSFETs, 18A, 150-200V

N-ChannelPowerMOSFETs,18A,150-200V

IRF240

REPETITIVE AVALANCHE AND dv/dt RATED

PartNumberBVDSSRDS(on)ID IRF240200V0.18Ω18A TheHEXFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateres

IRF240-243

N-Channel Power MOSFETs, 18A, 150-200V

N-ChannelPowerMOSFETs,18A,150-200V