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IRF232

N-Channel Power MOSFETs, 12A, 150-200 V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighpower,highspeedapplications,suchasswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddriversandhighenergypulsecircuits. ●LowRDS(on) ●VQSRatedat±20V

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

IRF233

8.0A and 9.0A, 150V and 200V, 0.4 and 0.6 Ohm, N-Channel Power MOSFETs

Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplica

Intersil

Intersil Corporation

IRF233

N-Channel Power MOSFETs, 12A, 150-200 V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighpower,highspeedapplications,suchasswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddriversandhighenergypulsecircuits. ●LowRDS(on) ●VQSRatedat±20V

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

IRF233

N-Channel Power MOSFETs, 12 A, 150-200 V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighpower,highspeedapplications,suchasswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddriversandhighenergypulsecircuits. ●LowRDS(on) ●VQSRatedat±20V ●

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

IRF233

N-Channel Power MOSFETs, 12 A, 150-200 V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighpower,highspeedapplications,suchasswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddriversandhighenergypulsecircuits. ●LowRDS(on) ●VQSRatedat±20V ●

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

IRF233

N-CHANNEL POWER MOSFETS

FEATURES •LowRDS(on) •Improvedinductiveruggedness •Fsatswitchingtimes •Ruggedpolysilicongatecellstructure •Lowinputcapacitance •Extendedsafeoperatingarea •Improvedhightemperaturereliability •TO-3package(Standard)

SamsungSamsung semiconductor

三星三星半导体

IRF234

Nanosecond Switching speeds

DESCRIPTION •DrainCurrentID=8.1A@TC=25℃ •DrainSourceVoltage- :VDSS=250V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.45Ω(Max) •NanosecondSwitchingspeeds APPLICATIONS •Switchingpowersupplies •Switchingconverters,motordriver,relaydriver •Driversforhigh-

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRF234

8.1A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel Power MOSFETs

Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplica

Intersil

Intersil Corporation

IRF235

8.1A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel Power MOSFETs

Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplica

Intersil

Intersil Corporation

IRF236

8.1A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel Power MOSFETs

Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplica

Intersil

Intersil Corporation

详细参数

  • 型号:

    IRF

  • 制造商:

    VISHAY

  • 制造商全称:

    Vishay Siliconix

  • 功能描述:

    Inductors Epoxy Conformal Coated Uniform Roll Coated

供应商型号品牌批号封装库存备注价格
IR
22+
263
6000
终端可免费供样,支持BOM配单
询价
IR
23+
263
8000
专注配单,只做原装进口现货
询价
IR
23+
263
8000
专注配单,只做原装进口现货
询价
IR
23+
263
7000
询价
5002
24+
SOP
6980
原装现货,可开13%税票
询价
IR
17+
DIP-4
6200
100%原装正品现货
询价
0
询价
Fairchi
24+
DXPAK
6000
进口原装正品假一赔十,货期7-10天
询价
IRF
4000一盘
13+
0
SOP8
询价
IRF
24+
SOP-8P
400
现货
询价
更多IRF供应商 更新时间2025-6-29 14:00:00