丝印：IRF7311；Package：SOP-8；30V 2N-Channel Enhancement Mode MOSFET

General Description The is the highest performance trench 2N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The meet the RoHS and Product requirement with full function reliability a

文件：2.087889 Mbytes 页数：6 Pages

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友台半导体

丝印：IRF7311；Package：SOP-8；30V 2N-Channel Enhancement Mode MOSFET

General Description 2N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The meet the RoHS and The is the highest performance trench Product requirement with full function reliability a

文件：2.21333 Mbytes 页数：6 Pages

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丝印：IRF7311；Package：SOP-8；30V 2N-Channel Enhancement Mode MOSFET

General Description The is the highest performance trench 2N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The meet the RoHS and Product requirement with full function reliability a

文件：2.087889 Mbytes 页数：6 Pages

UMW

友台半导体

丝印：IRF7313；Package：SOP-8；Dual N Channel MOSFET

Features VDs(V=30V RpsoN)

文件：361.14 Kbytes 页数：7 Pages

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丝印：IRF7316；Package：SOP-8；Dual P-Channel MOSFET

Features ® Vbs(v)=-30V ® Roson)

文件：392.68 Kbytes 页数：7 Pages

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友台半导体

丝印：IRF7316；Package：SOP-8；Dual P-Channel MOSFET

Features Vs (v)=-30V Rpson)

文件：364.15 Kbytes 页数：7 Pages

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丝印：IRF7316；Package：SOP-8；Dual P-Channel MOSFET

Features ® Vbs(v)=-30V ® Roson)

文件：392.68 Kbytes 页数：7 Pages

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友台半导体

丝印：IRF7319；Package：SOP-8；Dual N P Channel MOSFET

Features N-Ch: e Vos(v)=30V ® Rosony)

文件：430.91 Kbytes 页数：10 Pages

UMW

友台半导体

丝印：IRF7319；Package：SOP-8；Dual N P Channel MOSFET

Features N-Ch: e Vos(v)=30V ® Rosony)

文件：430.91 Kbytes 页数：10 Pages

UMW

友台半导体

丝印：IRF7319；Package：SOP-8；Dual N P Channel MOSFET

Features N-Ch: Vos (v)=30V Rosoy(on)

文件：402.24 Kbytes 页数：10 Pages

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