首页 >IRF>规格书列表

型号下载 订购功能描述制造商 上传企业LOGO

IRF7324

丝印:IRF7324;Package:SOP-8;Dual P-Channel MOSFET

● Trench Technology ● Ultra Low On-Resistance ● Low Profile (

文件:365.27 Kbytes 页数:8 Pages

UMW

友台半导体

IRF7324TR

丝印:IRF7324;Package:SOP-8;Dual P-Channel MOSFET

● Trench Technology ● Ultra Low On-Resistance ● Low Profile (

文件:365.27 Kbytes 页数:8 Pages

UMW

友台半导体

IRF7328

丝印:IRF7328;Package:SOP-8;Dual P-Channel 30 V (D-S) MOSFET

Trench Technology Ultra Low On-Resistance  Dual P-Channel MOSFET Available in Tape & Reel  Lead-Free Features

文件:402.14 Kbytes 页数:8 Pages

UMW

友台半导体

IRF7328TR

丝印:IRF7328;Package:SOP-8;Dual P-Channel 30 V (D-S) MOSFET

Trench Technology Ultra Low On-Resistance  Dual P-Channel MOSFET Available in Tape & Reel  Lead-Free Features

文件:402.14 Kbytes 页数:8 Pages

UMW

友台半导体

IRF7328TR

丝印:IRF7328;Package:SOP-8;Dual P-Channel 30 V (D-S) MOSFET

Features Trench Technology Ultra Low On-Resistance Dual P-Channel MOSFET Available in Tape & Reel Lead-Free

文件:351.79 Kbytes 页数:8 Pages

EVVOSEMI

翊欧

IRF7341

丝印:IRF7341;Package:SOP-8;Generation V Technology

The SOP-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The pa

文件:379.66 Kbytes 页数:7 Pages

UMW

友台半导体

IRF7341TR

丝印:IRF7341;Package:SOP-8;MOSFET

Description The SOP-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board

文件:340.07 Kbytes 页数:7 Pages

EVVOSEMI

翊欧

IRF7341TR

丝印:IRF7341;Package:SOP-8;Generation V Technology

The SOP-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The pa

文件:379.66 Kbytes 页数:7 Pages

UMW

友台半导体

IRF.F180

FAST THYRISTOR/ DIODE and MAGN-A-pak Power Modules THYRISTOR/ THYRISTOR

文件:241.57 Kbytes 页数:8 Pages

IRF

IRF034

Simple Drive Requirements

文件:48.31 Kbytes 页数:2 Pages

ISC

无锡固电

技术参数

  • OPN:

    IRF100B201

  • Qualification:

    Non-Automotive

  • Package name:

    TO220

  • VDS max:

    100 V

  • RDS (on) @10V max:

    4.2 mΩ

  • ID @25°C max:

    192 A

  • QG typ @10V:

    170 nC

  • Polarity:

    N

  • VGS(th) min:

    2 V

  • VGS(th) max:

    4 V

  • VGS(th):

    3 V

  • Technology:

    IR MOSFET™

供应商型号品牌批号封装库存备注价格
IR
22+
263
6000
终端可免费供样,支持BOM配单
询价
IR
23+
263
8000
专注配单,只做原装进口现货
询价
IR
23+
263
7000
询价
IR
25+
TO-3P
18000
原厂直接发货进口原装
询价
SAMSUNG
25+
TO-220
2987
只售原装自家现货!诚信经营!欢迎来电!
询价
20+
36800
原装优势主营型号-可开原型号增税票
询价
英飞凌
23+
TO-220
30000
原装正品,假一罚十
询价
0
询价
IR
TO
1100
正品原装--自家现货-实单可谈
询价
IR-韩国产
25+
TO-220
16402
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
更多IRF供应商 更新时间2026-1-18 10:01:00