| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
HEXFET짰 Power MOSFET VDSS=40V RDS(on)=1.6mΩ ID=160A Description ThisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprove | IRF International Rectifier | IRF | ||
AUTOMOTIVE MOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro | IRF International Rectifier | IRF | ||
AUTOMOTIVE MOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimp | IRF International Rectifier | IRF | ||
AUTOMOTIVE MOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisproductarea175°Cjunctionoperatingtemperature,fastswitchingspeedandim | IRF International Rectifier | IRF | ||
HEXFET Power MOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisproductarea175°Cjunctionoperatingtemperature,fastswitchingspeedandim | IRF International Rectifier | IRF | ||
AUTOMOTIVE MOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimp | IRF International Rectifier | IRF | ||
AUTOMOTIVE MOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisproductarea175°Cjunctionoperatingtemperature,fastswitchingspeedandim | IRF International Rectifier | IRF | ||
HEXFET Power MOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisproductarea175°Cjunctionoperatingtemperature,fastswitchingspeedandim | IRF International Rectifier | IRF | ||
Power MOSFET(Vdss=75V, Id=82A?? Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p | IRF International Rectifier | IRF | ||
Advanced Process Technology Description TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipationlevelstoapproximately50watts.ThelowthermalresistanceandlowpackagecostoftheTO-220contributetoitswideacceptancethroughouttheindustry. ●AdvancedProcessTe | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI |
详细参数
- 型号：
IRF
- 制造商：
VISHAY
- 制造商全称：
Vishay Siliconix
- 功能描述：
Inductors Epoxy Conformal Coated Uniform Roll Coated
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
22+ |
263 |
6000 |
终端可免费供样,支持BOM配单 |
询价 | ||
IR |
23+ |
263 |
8000 |
专注配单,只做原装进口现货 |
询价 | ||
IR |
23+ |
263 |
8000 |
专注配单,只做原装进口现货 |
询价 | ||
IR |
23+ |
263 |
7000 |
询价 | |||
0 |
询价 | ||||||
IR-韩国产 |
2020+ |
TO-220 |
16402 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 | ||
IR |
17+ |
DIP-4 |
6200 |
100%原装正品现货 |
询价 | ||
IRF |
24+ |
SOP-8P |
400 |
现货 |
询价 | ||
IR |
23+ |
NA |
2860 |
原装正品代理渠道价格优势 |
询价 | ||
IR |
24+ |
TO-220F |
5825 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
询价 |
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